Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 6.1kΩ |
| Resistor Ratio | 2.6 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount SOT-363 |
| Mfr. Part # | PUMH18,115 |
| Package | SOT-363 |
| Model Number | PUMH18,115 |
View Detail Information
Explore similar products
NPN NPN Resistor Equipped Transistor PUMH24 115 from Nexperia designed to reduce
Automotive Grade Complementary Transistor Diodes DCX114YUQ 7 F Lead Free Green
NPN Digital Transistor JSCJ DTC123EE with Built In Bias Resistors and 50 Volt
Compact dual digital transistor ROHM EMH11T2R designed for inverter and driver
Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 6.1kΩ |
| Resistor Ratio | 2.6 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount SOT-363 | Mfr. Part # | PUMH18,115 |
| Package | SOT-363 | Model Number | PUMH18,115 |
The Nexperia PEMH18 and PUMH18 are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices feature built-in bias resistors, reducing component count and simplifying circuit design. They are ideal for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications. The PEMH18 and PUMH18 are AEC-Q101 qualified, making them suitable for automotive applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | Model |
|---|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V | Per transistor |
| IO | Output current | - | - | - | 100 | mA | Per transistor |
| R1 | Bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k℆ | Per transistor |
| R2/R1 | Bias resistor ratio | - | 1.7 | 2.1 | 2.6 | - | Per transistor |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V | Per transistor |
| VEBO | Emitter-base voltage | Open collector | - | - | 7 | V | Per transistor |
| VI | Input voltage | Positive | - | - | 20 | V | Per transistor |
| VI | Input voltage | Negative | - | - | -7 | V | Per transistor |
| ICM | Peak collector current | Single pulse; tp ≤ 1 ms | - | - | 100 | mA | Per transistor |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 200 | mW | PEMH18 (SOT666) |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 200 | mW | PUMH18 (SOT363) |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 300 | mW | Per device (PEMH18) |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 300 | mW | Per device (PUMH18) |
| Tj | Junction temperature | - | - | - | 150 | ℃ | - |
| Tamb | Ambient temperature | - | -65 | - | 150 | ℃ | - |
| Tstg | Storage temperature | - | -65 | - | 150 | ℃ | - |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PEMH18 (SOT666) | - | - | 625 | K/W | Per transistor |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PUMH18 (SOT363) | - | - | 625 | K/W | Per transistor |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PEMH18 (SOT666) | - | - | 417 | K/W | Per device |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PUMH18 (SOT363) | - | - | 417 | K/W | Per device |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA | Per transistor |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | µA | Per transistor |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 ℃ | - | - | 5 | µA | Per transistor |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 600 | µA | Per transistor |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA | 50 | - | - | - | Per transistor |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV | Per transistor |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 µA | - | 0.9 | 0.3 | V | Per transistor |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA | 2.5 | 1.5 | - | V | Per transistor |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF | Per transistor |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz | Per transistor |
| Type Number | Package Name | Description | Package Configuration |
|---|---|---|---|
| PEMH18 | SOT666 | Plastic surface-mounted package; 6 leads | Ultra small and flat lead |
| PUMH18 | SC-88 | Plastic surface-mounted package; 6 leads | Very small |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!