Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage VEBO | 5V |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 5 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PDTB123YT,215 |
| Package | SOT-23 |
| Model Number | PDTB123YT,215 |
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Product Specification
| Emitter-Base Voltage VEBO | 5V | Input Resistor | 2.86kΩ |
| Resistor Ratio | 5 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 | Mfr. Part # | PDTB123YT,215 |
| Package | SOT-23 | Model Number | PDTB123YT,215 |
The Nexperia PDTB123YT is a PNP Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It offers a 500 mA output current capability and features built-in bias resistors (R1 = 2.2 k, R2 = 10 k) that simplify circuit design and reduce component count. This device serves as a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | -500 | mA | |
| R1 | Bias resistor 1 (input) | 1.54 | 2.2 | 2.86 | k | |
| R2/R1 | Bias resistor ratio | Tamb = 25 C | 4.1 | 4.55 | 5 | |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -5 | V |
| VI | Input voltage | positive | - | 5 | - | V |
| VI | Input voltage | negative | - | -20 | - | V |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 250 | mW |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = -40 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCB = -50 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -50 V; IB = 0 A; Tamb = 25 C | - | - | -0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -0.65 | mA |
| hFE | DC current gain | VCE = -5 V; IC = -50 mA; Tamb = 25 C | 70 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = -50 mA; IB = -2.5 mA; Tamb = 25 C | - | - | -300 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A; Tamb = 25 C | -0.4 | -0.6 | -1 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -20 mA; Tamb = 25 C | -0.5 | -1 | -1.4 | V |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C | - | 11 | - | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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