Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 460mW Surface Mount SOT-23 |
| Mfr. Part # | PDTD114ETR |
| Package | SOT-23 |
| Model Number | PDTD114ETR |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 10kΩ |
| Resistor Ratio | 1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 460mW Surface Mount SOT-23 | Mfr. Part # | PDTD114ETR |
| Package | SOT-23 | Model Number | PDTD114ETR |
The Nexperia PDTD114ET is an NPN Resistor-Equipped Transistor (RET) designed for surface-mounted applications. It features built-in bias resistors, simplifying circuit design and reducing component count. With a 500 mA output current capability and high temperature operation up to 175 C, it is suitable for IC input control, switching loads, and as a cost-saving alternative to BC807 series transistors in digital applications. This AEC-Q101 qualified component is offered in a compact SOT23 package.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 500 | mA |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.9 | 1 | 1.1 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage positive | - | -10 | - | 50 | V |
| Ptot | Total power dissipation | Tamb 25 C | - | 320 | 460 | mW |
| Tj | Junction temperature | - | - | - | 175 | C |
| Tamb | Ambient temperature | - | -55 | - | 175 | C |
| Tstg | Storage temperature | - | -55 | - | 175 | C |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] | - | - | 470 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [2] | - | - | 327 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 40 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| IEBO | Emitter-base cut-off current | VCE = 50 V; IB = 0 A; Tamb = 25 C | - | - | 0.5 | A |
| hFE | DC current gain | VCE = 5 V; IC = 50 mA; Tamb = 25 C | 70 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 2.5 mA; Tamb = 25 C | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | 0.6 | 1 | 1.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA; Tamb = 25 C | 1 | 1.9 | 3 | V |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 7 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C [2] | - | 225 | - | MHz |
[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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