Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage VEBO | 6V |
| Input Resistor | 10kΩ |
| Resistor Ratio | 4.7 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363) |
| Mfr. Part # | PUMD9,115 |
| Package | TSSOP-6(SOT-363) |
| Model Number | PUMD9,115 |
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Product Specification
| Emitter-Base Voltage VEBO | 6V | Input Resistor | 10kΩ |
| Resistor Ratio | 4.7 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363) | Mfr. Part # | PUMD9,115 |
| Package | TSSOP-6(SOT-363) | Model Number | PUMD9,115 |
The Nexperia PUMD9 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single, very small SOT363 (SC-88) SMD plastic package. This device integrates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. It is designed for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/BC857 series in digital applications, and is suitable for controlling IC inputs and switching loads. The PUMD9 offers a 100 mA output current capability and a collector-emitter voltage of 50 V.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor, for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 3.7 | 4.7 | 5.7 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| VI | Input voltage TR1 | - | - | - | -6 | V |
| VI | Input voltage TR2 | - | - | - | -40 | V |
| IO | Output current | - | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Ptot | Total power dissipation (per device) | Tamb 25 C [1] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | [1] | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air (per device) | [1] | - | - | 417 | K/W |
| Characteristics | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 mA; Tamb = 25 C | - | - | 150 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA; Tamb = 25 C | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.7 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 1 mA; Tamb = 25 C | 1.4 | 0.8 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 3.7 | 4.7 | 5.7 | - |
| TR1 (NPN) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
| TR2 (PNP) | ||||||
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 180 | - | MHz |
| Test information | ||||||
| R1 | Bias resistor 1 (input) | [1] | 10 | - | - | k |
| R2 | Bias resistor 2 | [1] | 47 | - | - | k |
| II1 | Test current | - | 90 | - | - | A |
| II2 | Test current | - | 140 | - | - | A |
| II3 | Test current | - | -55 | - | - | A |
| II4 | Test current | - | -105 | - | - | A |
| Package outline | ||||||
| Package Name | Description | Dimensions | Unit | - | - | - |
| TSSOP6 (SOT363) | Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | 2.1 x 1.25 x 0.95 | mm | - | - | - |
[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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