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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for
China Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for

  1. China Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for

Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for

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Emitter-Base Voltage VEBO 10V
Input Resistor 2.86kΩ
Resistor Ratio 1.1
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23
Mfr. Part # PDTB123ET,215
Package SOT-23
Model Number PDTB123ET,215

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Product Specification

Emitter-Base Voltage VEBO 10V Input Resistor 2.86kΩ
Resistor Ratio 1.1 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 Mfr. Part # PDTB123ET,215
Package SOT-23 Model Number PDTB123ET,215

Product Overview

The Nexperia PDTB123ET is a 500 mA PNP Resistor-Equipped Transistor (RET) housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for digital applications in automotive and industrial segments, this transistor simplifies circuit design and reduces component count due to its built-in bias resistors. It offers a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads. The device is AEC-Q101 qualified, ensuring reliability for demanding applications.

Product Attributes

  • Brand: Nexperia
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Package: SOT23 (TO-236AB)
  • Qualification: AEC-Q101
  • NPN Complement: PDTD123ET

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -50 V
IO Output current - - - -500 mA
R1 Bias resistor 1 (input) - 1.54 2.2 2.86 k
R2/R1 Bias resistor ratio - 0.9 1.0 1.1 -
VCBO Collector-base voltage open emitter - - -50 V
VEBO Emitter-base voltage open collector - - -10 V
VI Input voltage positive - - +10 V
VI Input voltage negative - - -12 V
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
ICBO Collector-base cut-off current VCB = -40 V; IE = 0 A - - -100 nA
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -50 V; IB = 0 A - - -0.5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -2.0 mA
hFE DC current gain VCE = -5 V; IC = -50 mA 40 - - -
VCEsat Collector-emitter saturation voltage IC = -50 mA; IB = -2.5 mA - - -0.3 V
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A -0.6 -1.1 -1.8 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA -1.0 -1.5 -2.0 V
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 100 MHz - 11 - pF

2410121742_Nexperia-PDTB123ET-215_C455003.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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