| Emitter-Base Voltage VEBO | 10V |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 1.1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PDTB123ET,215 |
| Package | SOT-23 |
| Model Number | PDTB123ET,215 |
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Product Specification
| Emitter-Base Voltage VEBO | 10V | Input Resistor | 2.86kΩ |
| Resistor Ratio | 1.1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 | Mfr. Part # | PDTB123ET,215 |
| Package | SOT-23 | Model Number | PDTB123ET,215 |
The Nexperia PDTB123ET is a 500 mA PNP Resistor-Equipped Transistor (RET) housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for digital applications in automotive and industrial segments, this transistor simplifies circuit design and reduces component count due to its built-in bias resistors. It offers a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads. The device is AEC-Q101 qualified, ensuring reliability for demanding applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | - | -500 | mA |
| R1 | Bias resistor 1 (input) | - | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | - | 0.9 | 1.0 | 1.1 | - |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -10 | V |
| VI | Input voltage | positive | - | - | +10 | V |
| VI | Input voltage | negative | - | - | -12 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = -40 V; IE = 0 A | - | - | -100 | nA |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -50 V; IB = 0 A | - | - | -0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -2.0 | mA |
| hFE | DC current gain | VCE = -5 V; IC = -50 mA | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -50 mA; IB = -2.5 mA | - | - | -0.3 | V |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | -0.6 | -1.1 | -1.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -20 mA | -1.0 | -1.5 | -2.0 | V |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 100 MHz | - | 11 | - | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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