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Hefei Purple Horn E-Commerce Co., Ltd.

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China 500 mA Output Current NPN Resistor Equipped Transistor Nexperia PDTD113ZUX in
China 500 mA Output Current NPN Resistor Equipped Transistor Nexperia PDTD113ZUX in

  1. China 500 mA Output Current NPN Resistor Equipped Transistor Nexperia PDTD113ZUX in

500 mA Output Current NPN Resistor Equipped Transistor Nexperia PDTD113ZUX in

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Output Voltage(VO(on)) -
Input Resistor 1kΩ
Resistor Ratio 10
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 425mW Surface Mount SOT-323
Mfr. Part # PDTD113ZUX
Package SOT-323
Model Number PDTD113ZUX

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  1. Product Details
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Product Specification

Output Voltage(VO(on)) - Input Resistor 1kΩ
Resistor Ratio 10 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 425mW Surface Mount SOT-323 Mfr. Part # PDTD113ZUX
Package SOT-323 Model Number PDTD113ZUX

Product Overview

The Nexperia PDTD1xxxU series comprises NPN Resistor-Equipped Transistors (RET) in a compact SOT323 (SC-70) surface-mounted device (SMD) plastic package. These transistors offer a 500 mA output current capability and a 50 V collector-emitter voltage, featuring built-in bias resistors that simplify circuit design and reduce component count. They are suitable for IC inputs control, switching loads, and high-temperature applications up to 175 C, serving as a cost-saving alternative to discrete transistors in digital applications. The series is AEC-Q101 qualified.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT323 (SC-70)
  • Technology: NPN Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101

Technical Specifications

Type Number Package PNP Complement R1 (Bias Resistor 1) (Typ) R2 (Bias Resistor 2) (Typ) VCEO (Max) IO (Max)
PDTD113EU SOT323 (SC-70) PDTB113EU 1 k 1 k 50 V 500 mA
PDTD113ZU SOT323 (SC-70) PDTB113ZU 1 k 10 k 50 V 500 mA
PDTD123EU SOT323 (SC-70) PDTB123EU 2.2 k 2.2 k 50 V 500 mA
PDTD123YU SOT323 (SC-70) PDTB123YU 2.2 k 10 k 50 V 500 mA
PDTD143EU SOT323 (SC-70) PDTB143EU 4.7 k 4.7 k 50 V 500 mA
PDTD143XU SOT323 (SC-70) PDTB143XU 4.7 k 10 k 50 V 500 mA
PDTD114EU SOT323 (SC-70) PDTB114EU 10 k 10 k 50 V 500 mA
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 500 mA
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Ptot Total power dissipation Tamb 25 C [2] - - 425 mW
Tj Junction temperature - - - 175 C
Tamb Ambient temperature - -55 - 175 C
Tstg Storage temperature - -55 - 175 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air [2] - - 353 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.


2410121745_Nexperia-PDTD113ZUX_C552242.pdf

Company Details

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,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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