| Description | Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | 2N6715-18 TIN/LEAD |
| Model Number | 2N6715-18 TIN/LEAD |
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Product Specification
| Description | Single, Pre-Biased Bipolar Transistors RoHS | Mfr. Part # | 2N6715-18 TIN/LEAD |
| Model Number | 2N6715-18 TIN/LEAD |
The 2N6714, 2N6715, 2N6726, and 2N6727 series are complementary silicon plastic power transistors from Central Semiconductor. These transistors are designed for general-purpose power amplifier and switching applications.
| Model | Description | Value | Units |
|---|---|---|---|
| 2N6714 / 2N6715 / 2N6726 / 2N6727 | Collector-Base Voltage (VCBO) | 40 (2N6714, 2N6726) / 50 (2N6715, 2N6727) | V |
| Collector-Emitter Voltage (VCEO) | 30 (2N6714, 2N6726) / 40 (2N6715, 2N6727) | V | |
| Emitter-Base Voltage (VEBO) | 5.0 | V | |
| Continuous Collector Current (IC) | 2.0 | A | |
| Continuous Base Current (IB) | 0.5 | A | |
| Power Dissipation (PD) (TA=25C) | 1.0 | W | |
| Power Dissipation (PD) (TC=25C) | 2.0 | W | |
| Operating and Storage Junction Temperature (TJ, Tstg) | -65 to +150 | C | |
| Thermal Resistance (JA) | 125 | C/W | |
| Thermal Resistance (JC) | 62.5 | C/W | |
| Electrical Characteristics (TA=25C unless otherwise noted) | Collector Cutoff Current (ICBO) (VCB=Rated VCBO) | 0.1 | A |
| Emitter Cutoff Current (IEBO) (VEB=5.0V) | 0.1 | A | |
| Collector-Breakdown Voltage (BVCBO) (IC=1.0mA) | 40 (2N6714, 2N6726) / 50 (2N6715, 2N6727) | V | |
| Collector-Emitter Breakdown Voltage (BVCEO) (IC=10mA) | 30 (2N6714, 2N6726) / 40 (2N6715, 2N6727) | V | |
| Emitter-Base Breakdown Voltage (BVEBO) (IE=1.0mA) | 5.0 | V | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) (IC=1.0A, IB=0.1A) | 0.5 | V | |
| Base-Emitter On Voltage (VBE(ON)) (VCE=1.0V, IC=1.0A) | 1.2 | V | |
| DC Current Gain (hFE) (VCE=1.0V, IC=0.1A) | 60 | ||
| DC Current Gain (hFE) (VCE=1.0V, IC=1.0A) | 50 - 250 | ||
| Transition Frequency (fT) (VCE=10V, IC=50mA, f=20MHz) | 50 - 500 | MHz | |
| Output Capacitance (Cob) (VCB=10V, IE=0, f=1.0MHz) | 30 | pF | |
| Type | NPN (2N6714, 2N6715) / PNP (2N6726, 2N6727) |
Note: The provided text indicates that transistors manufactured in the TO-237 package are discontinued and classified as End of Life (EOL). Specific replacement part numbers are listed in the source document for various Central Semiconductor part numbers, but not directly for the 2N6714/2N6715/2N6726/2N6727 series in this excerpt.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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