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China Silicon Plastic Power Transistor Central 2N6715-18 TIN LEAD for General Purpose
China Silicon Plastic Power Transistor Central 2N6715-18 TIN LEAD for General Purpose

  1. China Silicon Plastic Power Transistor Central 2N6715-18 TIN LEAD for General Purpose
  2. China Silicon Plastic Power Transistor Central 2N6715-18 TIN LEAD for General Purpose
  3. China Silicon Plastic Power Transistor Central 2N6715-18 TIN LEAD for General Purpose

Silicon Plastic Power Transistor Central 2N6715-18 TIN LEAD for General Purpose

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Description Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # 2N6715-18 TIN/LEAD
Model Number 2N6715-18 TIN/LEAD

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  1. Product Details
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Product Specification

Description Single, Pre-Biased Bipolar Transistors RoHS Mfr. Part # 2N6715-18 TIN/LEAD
Model Number 2N6715-18 TIN/LEAD

Product Overview

The 2N6714, 2N6715, 2N6726, and 2N6727 series are complementary silicon plastic power transistors from Central Semiconductor. These transistors are designed for general-purpose power amplifier and switching applications.

Product Attributes

  • Brand: Central Semiconductor
  • Material: Silicon Plastic
  • Case: TO-237
  • Lead Code: 1) Emitter, 2) Base, 3) Collector

Technical Specifications

Model Description Value Units
2N6714 / 2N6715 / 2N6726 / 2N6727 Collector-Base Voltage (VCBO) 40 (2N6714, 2N6726) / 50 (2N6715, 2N6727) V
Collector-Emitter Voltage (VCEO) 30 (2N6714, 2N6726) / 40 (2N6715, 2N6727) V
Emitter-Base Voltage (VEBO) 5.0 V
Continuous Collector Current (IC) 2.0 A
Continuous Base Current (IB) 0.5 A
Power Dissipation (PD) (TA=25C) 1.0 W
Power Dissipation (PD) (TC=25C) 2.0 W
Operating and Storage Junction Temperature (TJ, Tstg) -65 to +150 C
Thermal Resistance (JA) 125 C/W
Thermal Resistance (JC) 62.5 C/W
Electrical Characteristics (TA=25C unless otherwise noted) Collector Cutoff Current (ICBO) (VCB=Rated VCBO) 0.1 A
Emitter Cutoff Current (IEBO) (VEB=5.0V) 0.1 A
Collector-Breakdown Voltage (BVCBO) (IC=1.0mA) 40 (2N6714, 2N6726) / 50 (2N6715, 2N6727) V
Collector-Emitter Breakdown Voltage (BVCEO) (IC=10mA) 30 (2N6714, 2N6726) / 40 (2N6715, 2N6727) V
Emitter-Base Breakdown Voltage (BVEBO) (IE=1.0mA) 5.0 V
Collector-Emitter Saturation Voltage (VCE(SAT)) (IC=1.0A, IB=0.1A) 0.5 V
Base-Emitter On Voltage (VBE(ON)) (VCE=1.0V, IC=1.0A) 1.2 V
DC Current Gain (hFE) (VCE=1.0V, IC=0.1A) 60
DC Current Gain (hFE) (VCE=1.0V, IC=1.0A) 50 - 250
Transition Frequency (fT) (VCE=10V, IC=50mA, f=20MHz) 50 - 500 MHz
Output Capacitance (Cob) (VCB=10V, IE=0, f=1.0MHz) 30 pF
Type NPN (2N6714, 2N6715) / PNP (2N6726, 2N6727)

Note: The provided text indicates that transistors manufactured in the TO-237 package are discontinued and classified as End of Life (EOL). Specific replacement part numbers are listed in the source document for various Central Semiconductor part numbers, but not directly for the 2N6714/2N6715/2N6726/2N6727 series in this excerpt.


2504101957_Central-2N6715-18-TIN-LEAD_C22050395.pdf

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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