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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring
China Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring

  1. China Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring

Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring

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Output Voltage(VO(on)) 300mV@10mA,0.5mA
Input Resistor 10kΩ
Resistor Ratio 1
Collector - Emitter Voltage VCEO 50V
Description 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # DTC114YE
Package SOT-523
Model Number DTC114YE

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  1. Product Details
  2. Company Details

Product Specification

Output Voltage(VO(on)) 300mV@10mA,0.5mA Input Resistor 10kΩ
Resistor Ratio 1 Collector - Emitter Voltage VCEO 50V
Description 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS Mfr. Part # DTC114YE
Package SOT-523 Model Number DTC114YE

Product Overview

This NPN Silicon Epitaxial Planar Digital Transistor is designed with built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing processes required. It is suitable for various electronic applications where integrated bias resistance is beneficial.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Digital Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Description
DC Current Gain hFE 68 - - - at VCE = 5 V, IC = 5 mA
Collector Base Cutoff Current ICBO - - 0.5 A at VCB = 50 V
Emitter Base Cutoff Current IEBO - - 0.88 mA at VEB = 5 V
Collector Emitter Saturation Voltage VCE(sat) - - 0.3 V at IC = 5 mA, IB = 0.25 mA
Input on Voltage V(on) - - 1.4 V at VCE = 0.3 V, IC = 1 mA
Input off Voltage V(off) 0.3 - - V at VCE = 5 V, IC = 100 A
Transition frequency fT - 250 - MHz at VCE = 10 V, -IE = 5 mA, f = 100 MHz
Input Resistance R1 7 10 13 K -
Resistance Ratio R2 / R1 3.7 4.7 5.7 - -

Absolute Maximum Ratings

Parameter Symbol Value Unit
Collector Emitter Voltage VCEO 50 V
Input Voltage VI -6 to +40 V
Collector Current IC 100 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C

Package Outline

Plastic surface mounted package; 3 leads SOT-523

Symbol Dimension in Millimeters Min Max
A - 0.60 0.80
A1 - 0.010 0.100
B - 0.95 1.05
bp - 0.26 0.40
bq - 0.16 0.30
C - 0.09 0.15
D - 1.50 1.70
E - 0.70 0.85
HE - 1.45 1.75
Lp - 0.16 0.36
- 0 5

2411041754_CBI-DTC114YE_C21714160.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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