Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage VEBO | 10V |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1.2 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323 |
| Mfr. Part # | PDTA143EU,115 |
| Package | SOT-323 |
| Model Number | PDTA143EU,115 |
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Product Specification
| Emitter-Base Voltage VEBO | 10V | Input Resistor | 4.7kΩ |
| Resistor Ratio | 1.2 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323 | Mfr. Part # | PDTA143EU,115 |
| Package | SOT-323 | Model Number | PDTA143EU,115 |
The Nexperia PDTA143E series comprises PNP resistor-equipped transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. These transistors are designed to reduce component count, simplify circuit design, and lower pick-and-place costs due to their built-in bias resistors. They are AEC-Q101 qualified, making them suitable for digital applications in automotive and industrial segments. The PDTA143E series offers a cost-saving alternative to BC847/857 series in digital applications, and is ideal for controlling IC inputs and switching loads.
| Type Number | Package | NPN Complement | Package Configuration | VCEO (V) | IO (mA) | R1 Bias Resistor (k) | R2/R1 Bias Resistor Ratio |
|---|---|---|---|---|---|---|---|
| PDTA143EE | SOT416 (SC-75) | PDTC143EE | ultra small | -50 | -100 | 3.3 to 6.1 (Typ 4.7) | 0.8 to 1.2 (Typ 1) |
| PDTA143EM | SOT883 (SC-101) | PDTC143EM | leadless ultra small | -50 | -100 | 3.3 to 6.1 (Typ 4.7) | 0.8 to 1.2 (Typ 1) |
| PDTA143ET | SOT23 (TO-236AB) | PDTC143ET | small | -50 | -100 | 3.3 to 6.1 (Typ 4.7) | 0.8 to 1.2 (Typ 1) |
| PDTA143EU | SOT323 (SC-70) | PDTC143EU | very small | -50 | -100 | 3.3 to 6.1 (Typ 4.7) | 0.8 to 1.2 (Typ 1) |
| Type Number | Marking Code |
|---|---|
| PDTA143EE | 01 |
| PDTA143EM | DL |
| PDTA143ET | *01 |
| PDTA143EU | *01 |
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base voltage | open emitter | - | -50 | V |
| VCEO | Collector-emitter voltage | open base | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | -10 | V |
| VI | Input voltage | positive | - | +10 | V |
| VI | Input voltage | negative | - | -30 | V |
| IO | Output current | - | - | -100 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C, PDTA143EE (SOT416) | - | 150 | mW |
| Ptot | Total power dissipation | Tamb 25 C, PDTA143EM (SOT883) | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C, PDTA143ET (SOT23) | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C, PDTA143EU (SOT323) | - | 200 | mW |
| Tj | Junction temperature | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | +150 | C |
| Tstg | Storage temperature | - | -65 | +150 | C |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA143EE (SOT416) | - | - | 830 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA143EM (SOT883) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA143ET (SOT23) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA143EU (SOT323) | - | - | 625 | K/W |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -900 | A |
| hFE | DC current gain | VCE = -5 V; IC = -10 mA | 30 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | - | -150 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -1.1 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -20 mA | -2.5 | -1.9 | - | V |
| R1 | Bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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