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Hefei Purple Horn E-Commerce Co., Ltd.

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China Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in
China Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in

  1. China Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in

Nexperia PDTD113ET 215 Transistor Featuring 500 mA Output Current and Built in

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Output Voltage(VO(on)) -
Input Resistor 1kΩ
Resistor Ratio 1
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 250mW Surface Mount SOT-23
Mfr. Part # PDTD113ET,215
Package SOT-23
Model Number PDTD113ET,215

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Product Specification

Output Voltage(VO(on)) - Input Resistor 1kΩ
Resistor Ratio 1 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 250mW Surface Mount SOT-23 Mfr. Part # PDTD113ET,215
Package SOT-23 Model Number PDTD113ET,215

Product Overview

The Nexperia PDTD113E series offers NPN Resistor-Equipped Transistors (RET) with a 500 mA output current capability. These transistors are designed to simplify circuit design, reduce component count, and lower pick and place costs by integrating built-in bias resistors (R1 = 1 k, R2 = 1 k). They are suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC817 series in digital applications, controlling IC inputs, and switching loads. The series is available in SOT346, SOT54, and SOT23 package variants.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistors (RET)
  • Built-in Resistors: R1 = 1 k, R2 = 1 k
  • Resistor Ratio Tolerance: 10 %

Technical Specifications

Model Package Name Description VCEO (V) IO (mA) R1 Bias Resistor (k) R2/R1 Ratio
PDTD113EK SOT346 (SC-59A, TO-236) Plastic surface mounted package; 3 leads 50 500 0.7 to 1.3 0.9 to 1.1
PDTD113ES SOT54 (SC-43A, TO-92) Plastic single-ended leaded (through hole) package; 3 leads 50 500 0.7 to 1.3 0.9 to 1.1
PDTD113ET SOT23 (TO-236AB) Plastic surface mounted package; 3 leads 50 500 0.7 to 1.3 0.9 to 1.1
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current (DC) - - - 500 mA
R1 Bias resistor 1 (input) - 0.7 1 1.3 k
R2/R1 Bias resistor ratio - 0.9 1.0 1.1 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - 10 V
VI Input voltage negative -10 - - V
Ptot Total power dissipation Tamb 25 C (SOT346) - - 250 mW
Ptot Total power dissipation Tamb 25 C (SOT54) - - 500 mW
Ptot Total power dissipation Tamb 25 C (SOT23) - - 250 mW
Tstg Storage temperature - -65 - 150 C
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient SOT346 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT54 - - 250 K/W
Rth(j-a) Thermal resistance junction to ambient SOT23 - - 500 K/W
ICBO Collector-base cut-off current VCB = 40 V; IE = 0 A - - 100 nA
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 50 V; IB = 0 A - - 0.5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 4 mA
hFE DC current gain VCE = 5 V; IC = 50 mA 33 - - -
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA - - 0.3 V
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A 0.6 1.1 1.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA 1.0 1.4 1.8 V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 100 MHz - 7 - pF

2410121738_Nexperia-PDTD113ET-215_C2928907.pdf

Company Details

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,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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