China factories

Chat Now Send Email
China factory - Hefei Purple Horn E-Commerce Co., Ltd.

Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
  1. Home
  2. Products
  3. About Us
  4. Contact Us

Leave a Message

we will call you back quickly!

Submit Requirement
China Double resistor transistor Nexperia PEMD13 115 in plastic SMD package offering
China Double resistor transistor Nexperia PEMD13 115 in plastic SMD package offering

  1. China Double resistor transistor Nexperia PEMD13 115 in plastic SMD package offering

Double resistor transistor Nexperia PEMD13 115 in plastic SMD package offering

  1. MOQ:
  2. Price:
  3. Get Latest Price
Emitter-Base Voltage VEBO 5V
Input Resistor 4.7kΩ
Resistor Ratio 10
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-666-6
Mfr. Part # PEMD13,115
Package SOT-666-6
Model Number PEMD13,115

View Detail Information

Inquiry by Email Get Latest Price
Chat online Now Ask for best deal
  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage VEBO 5V Input Resistor 4.7kΩ
Resistor Ratio 10 Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-666-6 Mfr. Part # PEMD13,115
Package SOT-666-6 Model Number PEMD13,115

Product Overview

Nexperia's PEMD13 and PUMD13 are NPN/PNP double Resistor-Equipped Transistors (RET) in compact Surface-Mounted Device (SMD) plastic packages. These devices integrate built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are suitable for applications such as low-current peripheral drivers and controlling IC inputs, offering a reliable solution for replacing general-purpose transistors in digital applications. The PEMD13 and PUMD13 are AEC-Q101 qualified, ensuring suitability for demanding automotive applications.

Product Attributes

  • Brand: Nexperia
  • Certifications: AEC-Q101 qualified
  • Package Types: SOT666, SOT363 (SC-88)
  • Resistor Values: R1 = 4.7 kΩ, R2 = 47 kΩ

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 kΩ
R2/R1 Bias resistor ratio - 8 10 12 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
VI Input voltage TR1 positive - - - +30 V
VI Input voltage TR1 negative - - - -5 V
VI Input voltage TR2 positive - - - +5 V
VI Input voltage TR2 negative - - - -30 V
ICM Peak collector current Single pulse; tp ≤ 1 ms - - 100 mA
Per device
Ptot Total power dissipation Tamb ≤ 25 °C (PEMD13 SOT666) - - 300 mW
Ptot Total power dissipation Tamb ≤ 25 °C (PUMD13 SOT363) - - 300 mW
Tj Junction temperature - - - 150 °C
Tamb Ambient temperature - -65 - +150 °C
Tstg Storage temperature - -65 - +150 °C
Thermal characteristics (FR4 PCB, standard footprint)
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD13 SOT666) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD13 SOT363) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD13 SOT666) Per device - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD13 SOT363) Per device - - 417 K/W
Characteristics (Tamb = 25 °C unless otherwise specified)
Per transistor; for the PNP transistor (TR2) with negative polarity
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 °C - - 5 µA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 170 µA
hFE DC current gain VCE = 5 V; IC = 10 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 µA - 0.6 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 180 - MHz
Ordering Information
Type number Package Name Description Version Packing quantity
PEMD13 SOT666 Plastic surface-mounted package; 6 leads - 3000 4000 8000
PUMD13 SOT363 SC-88 plastic surface-mounted package; 6 leads - 3000 4000 8000

2410301810_Nexperia-PEMD13-115_C461178.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...

+ Read More

Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement