Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 2.1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363 |
| Mfr. Part # | PUMD18,115 |
| Package | SOT-363 |
| Model Number | PUMD18,115 |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 4.7kΩ |
| Resistor Ratio | 2.1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363 | Mfr. Part # | PUMD18,115 |
| Package | SOT-363 | Model Number | PUMD18,115 |
The Nexperia PEMD18 and PUMD18 are NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors (R1 = 4.7 k, R2 = 10 k), which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Key benefits include a 100 mA output current capability and a simplified circuit design.
Nexperia's PEMD18 and PUMD18 are NPN/PNP double Resistor-Equipped Transistors (RET) designed for surface-mount applications. These devices integrate bias resistors (R1 = 4.7 k, R2 = 10 k), offering a compact solution that reduces component count and simplifies circuit design. They are ideal for low-current peripheral driving and controlling IC inputs, and are AEC-Q101 qualified for automotive use.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor; for the PNP transistor (TR2) with negative polarity | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | - | 1.7 | 2.1 | 2.6 | - |
| Per transistor; for the PNP transistor (TR2) with negative polarity | ||||||
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 7 | V |
| VI | Input voltage TR1 | positive | - | - | +20 | V |
| VI | Input voltage TR1 | negative | - | - | -7 | V |
| VI | Input voltage TR2 | positive | - | - | +7 | V |
| VI | Input voltage TR2 | negative | - | - | -20 | V |
| IO | Output current | - | - | - | 100 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 100 | mA |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C; PEMD18 (SOT666) | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PUMD18 (SOT363) | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Per transistor | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air; PEMD18 (SOT666) | - | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air; PUMD18 (SOT363) | - | - | - | 625 | K/W |
| Per device | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air; PEMD18 (SOT666) | - | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air; PUMD18 (SOT363) | - | - | - | 417 | K/W |
| Characteristics of built-in transistor | ||||||
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 600 | A |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA | 50 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 0.9 | 0.3 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA | 2.5 | 1.5 | - | V |
| R1 | Bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | - | 1.7 | 2.1 | 2.6 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 180 | - | MHz |
| Type number | Package Name | Description | Version |
|---|---|---|---|
| PEMD18 | SOT666 | Plastic surface-mounted package; 6 leads | - |
| PUMD18 | SC-88 | Plastic surface-mounted package; 6 leads | SOT363 |
| Type number | Marking code[1] |
|---|---|
| PEMD18 | 6B |
| PUMD18 | T5* |
[1] * = placeholder for manufacturing site code
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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