Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 130kΩ |
| Resistor Ratio | 1.2 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363 |
| Mfr. Part # | PUMD24,115 |
| Package | SOT-363 |
| Model Number | PUMD24,115 |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 130kΩ |
| Resistor Ratio | 1.2 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363 | Mfr. Part # | PUMD24,115 |
| Package | SOT-363 | Model Number | PUMD24,115 |
The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single SOT363 (SC-88) surface-mounted device (SMD) plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | 100 | mA | |
| R1 | Bias resistor 1 (input) | 15.4 | 22 | 28.6 | k | |
| R2/R1 | Bias resistor ratio | 0.8 | 1 | 1.2 | ||
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI (TR1 NPN) | Input voltage | -10 | - | 40 | V | |
| VI (TR2 PNP) | Input voltage | -40 | - | 10 | V | |
| IO | Output current | - | - | 100 | mA | |
| Ptot (Tamb ≤ 25 °C) | Total power dissipation | Device mounted on FR4 PCB | - | - | 300 | mW |
| Tj | Junction temperature | - | - | 150 | °C | |
| Tamb | Ambient temperature | -55 | - | 150 | °C | |
| Tstg | Storage temperature | -65 | - | 150 | °C | |
| Thermal characteristics | ||||||
| Rth(j-a) (per device) | Thermal resistance junction to ambient | Free air, device mounted on FR4 PCB | - | - | 417 | K/W |
| Characteristics | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 °C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 °C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 °C | - | - | 5 | µA |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 mA; Tamb = 25 °C | - | - | 180 | µA |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 °C | 60 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 µA; Tamb = 25 °C | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C | 2.5 | 1.7 | - | V |
| Cc (TR1 NPN) | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | - | - | 2.5 | pF |
| fT (TR1 NPN) | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C | - | 230 | - | MHz |
| Cc (TR2 PNP) | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | - | - | 3 | pF |
| fT (TR2 PNP) | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | - | 180 | - | MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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