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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching
China NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching

  1. China NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching

NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching

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Input Resistor 2.2kΩ
Collector - Emitter Voltage VCEO 50V
Description 50V SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # BCR 108W H6327
Package SOT-323-3
Model Number BCR 108W H6327

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Product Specification

Input Resistor 2.2kΩ Collector - Emitter Voltage VCEO 50V
Description 50V SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS Mfr. Part # BCR 108W H6327
Package SOT-323-3 Model Number BCR 108W H6327

Product Overview

The BCR108 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package. All variants are Pb-free (RoHS compliant) and qualified according to AEC Q101.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: AEC Q101, RoHS compliant
  • Material: Silicon

Technical Specifications

ParameterSymbolBCR108BCR108SBCR108WUnit
Collector-emitter voltageVCEO505050V
Collector-base voltageVCBO505050V
Input forward voltageVi(fwd)202020V
Input reverse voltageVi(rev)555V
Collector currentIC100100100mA
Total power dissipation (TS 102C)Ptot200--mW
Total power dissipation (TS 115C)Ptot-250-mW
Total power dissipation (TS 124C)Ptot--250mW
Junction temperatureTj150150150C
Storage temperatureTstg-65 ... 150-65 ... 150-65 ... 150C
Junction - soldering point thermal resistanceRthJS 240 140 105K/W
Collector-emitter breakdown voltage (IC = 100 A, IB = 0)V(BR)CEO505050V
Collector-base breakdown voltage (IC = 10 A, IE = 0)V(BR)CBO505050V
Collector-base cutoff current (VCB = 40 V, IE = 0)ICBO--100nA
Emitter-base cutoff current (VEB = 5 V, IC = 0)IEBO--164A
DC current gain (IC = 5 mA, VCE = 5 V)hFE707070-
Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA)VCEsat--0.3V
Input off voltage (IC = 100 A, VCE = 5 V)Vi(off)0.4 - 0.80.4 - 0.80.4 - 0.8V
Input on voltage (IC = 2 mA, VCE = 0.3 V)Vi(on)0.5 - 1.10.5 - 1.10.5 - 1.1V
Input resistor R1R11.5 - 2.91.5 - 2.91.5 - 2.9k
Resistor ratio R1/R2R1/R20.042 - 0.0520.042 - 0.0520.042 - 0.052-
Transition frequency (IC = 10 mA, VCE = 5 V, f = 1 MHz)fT170170170MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb222pF

2410121919_Infineon-BCR-108W-H6327_C533809.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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