Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363) |
| Mfr. Part # | PUMD2,115 |
| Package | TSSOP-6(SOT-363) |
| Model Number | PUMD2,115 |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 22kΩ |
| Resistor Ratio | 1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363) | Mfr. Part # | PUMD2,115 |
| Package | TSSOP-6(SOT-363) | Model Number | PUMD2,115 |
The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base [1] | - | - | 50 | V |
| IO | Output current | [1] | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [2] | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio | [2] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter [1] | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector [1] | - | - | 10 | V |
| VI (TR1 NPN) | Input voltage | -10 | - | 40 | V | |
| VI (TR2 PNP) | Input voltage | -40 | - | 10 | V | |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 200 | mW |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 625 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C [1] | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C [1] | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C [1] | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C [1] | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C [1] | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 mA; Tamb = 25 C [1] | - | - | 180 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C [1] | 60 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C [1] | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C [1] | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA; Tamb = 25 C | 2.5 | 1.7 | - | V |
| Cc (TR1 NPN) | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT (TR1 NPN) | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [3] | - | 230 | - | MHz |
| Cc (TR2 PNP) | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| fT (TR2 PNP) | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [3] | - | 180 | - | MHz |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 300 | mW |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 417 | K/W |
| General | ||||||
| R1 | Bias resistor 1 (input) | [2] | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio | [2] | 0.8 | 1 | 1.2 | - |
| Package | TSSOP6 (SOT363) | |||||
| Body dimensions | 2.1 x 1.25 x 0.95 | mm | ||||
| Pitch | 0.65 | mm | ||||
[1] For the PNP transistor with negative polarity.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
[3] Characteristics of built-in transistor.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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