| Input Resistor | 1kΩ |
| Resistor Ratio | 10 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PDTD113ZT,215 |
| Package | SOT-23 |
| Model Number | PDTD113ZT,215 |
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Product Specification
| Input Resistor | 1kΩ | Resistor Ratio | 10 |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PDTD113ZT,215 | Package | SOT-23 |
| Model Number | PDTD113ZT,215 |
The Nexperia PDTD113ZT is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. With a 500 mA output current capability and a 10% resistor ratio tolerance, it serves as a cost-effective alternative for digital applications, enabling control of IC inputs and switching of loads.
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 50 | V |
| Output Current (IO) | - | - | - | 500 | mA |
| Bias Resistor R1 (Input) | - | 0.7 | 1 | 1.3 | k |
| Bias Resistor Ratio R2/R1 | Tamb = 25 C | 9 | 10 | 11 | - |
| Collector-Base Voltage (VCBO) | Open emitter | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | 5 | V |
| Input Voltage (VI) | - | -10 | - | -5 | V |
| Total Power Dissipation (Ptot) | Tamb 25 C | - | - | 250 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | C |
| Thermal Resistance (Rth(j-a)) | In free air [1] | - | - | 500 | K/W |
| Collector-Base Cut-off Current (ICBO) | VCB = 40 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| Collector-Emitter Cut-off Current (ICEO) | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| Collector-Emitter Cut-off Current (ICEO) | VCE = 50 V; IB = 0 A; Tamb = 25 C | - | - | 0.5 | A |
| Emitter-Base Cut-off Current (IEBO) | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 0.8 | mA |
| DC Current Gain (hFE) | VCE = 5 V; IC = 50 mA; Tamb = 25 C | 70 | - | - | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 50 mA; IB = 2.5 mA; Tamb = 25 C | - | - | 300 | mV |
| Off-State Input Voltage (VI(off)) | VCE = 5 V; IC = 100 A; Tamb = 25 C | 0.3 | 0.6 | 1 | V |
| On-State Input Voltage (VI(on)) | VCE = 0.3 V; IC = 20 mA; Tamb = 25 C | 0.4 | 0.8 | 1.4 | V |
| Collector Capacitance (Cc) | VCB = 10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C | - | 7 | - | pF |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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