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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent
China Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent

  1. China Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent

Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent

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Input Resistor 1kΩ
Resistor Ratio 10
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23
Mfr. Part # PDTD113ZT,215
Package SOT-23
Model Number PDTD113ZT,215

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  1. Product Details
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Product Specification

Input Resistor 1kΩ Resistor Ratio 10
Collector - Emitter Voltage VCEO 50V Description Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23
Mfr. Part # PDTD113ZT,215 Package SOT-23
Model Number PDTD113ZT,215

Product Overview

The Nexperia PDTD113ZT is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. With a 500 mA output current capability and a 10% resistor ratio tolerance, it serves as a cost-effective alternative for digital applications, enabling control of IC inputs and switching of loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: Resistor-Equipped Transistor (RET)
  • Technology: NPN
  • Package Type: SOT23
  • Qualification: Non-automotive qualified (as per revision history)

Technical Specifications

Parameter Conditions Min Typ Max Unit
Collector-Emitter Voltage (VCEO) Open base - - 50 V
Output Current (IO) - - - 500 mA
Bias Resistor R1 (Input) - 0.7 1 1.3 k
Bias Resistor Ratio R2/R1 Tamb = 25 C 9 10 11 -
Collector-Base Voltage (VCBO) Open emitter - - 50 V
Emitter-Base Voltage (VEBO) Open collector - - 5 V
Input Voltage (VI) - -10 - -5 V
Total Power Dissipation (Ptot) Tamb 25 C - - 250 mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - 150 C
Storage Temperature (Tstg) - -65 - 150 C
Thermal Resistance (Rth(j-a)) In free air [1] - - 500 K/W
Collector-Base Cut-off Current (ICBO) VCB = 40 V; IE = 0 A; Tamb = 25 C - - 100 nA
Collector-Emitter Cut-off Current (ICEO) VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = 50 V; IB = 0 A; Tamb = 25 C - - 0.5 A
Emitter-Base Cut-off Current (IEBO) VEB = 5 V; IC = 0 A; Tamb = 25 C - - 0.8 mA
DC Current Gain (hFE) VCE = 5 V; IC = 50 mA; Tamb = 25 C 70 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = 50 mA; IB = 2.5 mA; Tamb = 25 C - - 300 mV
Off-State Input Voltage (VI(off)) VCE = 5 V; IC = 100 A; Tamb = 25 C 0.3 0.6 1 V
On-State Input Voltage (VI(on)) VCE = 0.3 V; IC = 20 mA; Tamb = 25 C 0.4 0.8 1.4 V
Collector Capacitance (Cc) VCB = 10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C - 7 - pF

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.


2410010331_Nexperia-PDTD113ZT-215_C168861.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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