Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage VEBO | 10V |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PDTC114ET,235 |
| Package | SOT-23 |
| Model Number | PDTC114ET,235 |
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Product Specification
| Emitter-Base Voltage VEBO | 10V | Input Resistor | 10kΩ |
| Resistor Ratio | 1 | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23 | Mfr. Part # | PDTC114ET,235 |
| Package | SOT-23 | Model Number | PDTC114ET,235 |
The Nexperia PDTC114ET is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This transistor offers a 100 mA output current capability and serves as a cost-saving alternative to the BC847 series in digital applications. It is suitable for controlling IC inputs and switching loads.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | positive | - | - | 40 | V |
| VI | Input voltage | negative | -10 | - | - | V |
| IO | Output current | - | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 500 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.8 | 1.1 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA; Tamb = 25 C | 1.8 | 2.5 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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