| Output Voltage(VO(on)) | 250mV |
| Input Resistor | 47kΩ |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 50mA 200mW Surface Mount SOT-363 |
| Mfr. Part # | DDC144TU-7 |
| Package | SOT-363 |
| Model Number | DDC144TU-7 |
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Product Specification
| Output Voltage(VO(on)) | 250mV | Input Resistor | 47kΩ |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 50V 50mA 200mW Surface Mount SOT-363 |
| Mfr. Part # | DDC144TU-7 | Package | SOT-363 |
| Model Number | DDC144TU-7 |
The DDC144TU is a dual NPN transistor designed for logic switching applications, suitable for use with micro-controllers and comparators. It features integrated 47k Ohm base resistors, enabling control with higher supply voltages and providing built-in current limiting. These discrete NPN transistors can be utilized as part of a larger circuit or as standalone components, supporting a maximum continuous current of 100 mA.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Total Device Ratings | ||||
| Power Dissipation | Pd | 200 | mW | @TA = 25C |
| Power Deration above 25C | Pder | 1.6 | mW / C | |
| Output Current | Iout | 100 | mA | |
| Junction Operation and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Thermal Resistance, junction to ambient | RJA | 625 | C/W | @ TA = 25C (Ref: equivalent to only one heated junction) |
| Sub-Component Device: Discrete NPN Transistor (Q1, Q2) Ratings | ||||
| Collector-Base Voltage | VCBO | 50 | V | @TA = 25C |
| Collector-Emitter Voltage | VCEO | 50 | V | @TA = 25C |
| Emitter-Base Voltage | VEBO | 6 | V | @TA = 25C |
| Collector Current (dc) | IC(max) | 50 | mA | @TA = 25C |
| Electrical Characteristics | ||||
| Collector-Base Cut Off Current | ICBO | 100 | nA | VCB = 50V, IE = 0 |
| Collector-Emitter Cut Off Current | ICEO | 500 | nA | VCE = 50V, IB = 0 |
| Emitter-Base Cut Off Current | IEBO | 500 | nA | VEB = 5V, IC = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | IC = 50uA, IE = 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC = 1 mA, IB = 0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 50uA, IC = 0 |
| DC Current Gain | hFE | 150-400 | VCE = 5V, IC = 1 mA | |
| DC Current Gain | hFE | 150-400 | VCE = 5V, IC = 10 mA | |
| DC Current Gain | hFE | 150-350 | VCE = 5V, IC = 25 mA | |
| DC Current Gain | hFE | 150-300 | VCE = 5V, IC = 50 mA | |
| DC Current Gain | hFE | 50-110 | VCE = 5V, IC = 100 mA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.2-0.3 | V | IC = 50mA, IB= 5mA |
| Output Voltage (equivalent to VCE(SAT) or VO(on)) | VOL | 0.2-0.25 | Vdc | VCC = 5V, VB = 2.5V, RL=10K |
| Input Voltage | VI(ON) | 0.95 | Vdc | VO= 0.3V, IC= 2mA |
| Input Current | Ii | 19.2-28 | mA | VI = 5V |
| Base-Emitter Turn-on Voltage | VBE(ON) | 1.2 | V | VCE = 5V, IC = 2mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.6 | V | IC = 200uA, IB = 20uA |
| Input Resistor (Base) | R1 | 47 | K | +/- 30% |
| Transition Frequency (gain-bandwidth product) | fT | 250 | MHz | VCE = 10V, IE = 5mA, f =100MHz |
| Collector Capacitance (Output Capacitance) | CC | 5 | pF | VCB = 10V, IE = 0, f = 1MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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