Hefei Purple Horn E-Commerce Co., Ltd.
| Voltage - Isolation | 4000Vrms |
| Description | Power Driver Modules RoHS |
| Mfr. Part # | MSCSM120DAM11CT3AG |
| Model Number | MSCSM120DAM11CT3AG |
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Product Specification
| Voltage - Isolation | 4000Vrms | Description | Power Driver Modules RoHS |
| Mfr. Part # | MSCSM120DAM11CT3AG | Model Number | MSCSM120DAM11CT3AG |
The MSCSM120DAM11CT3AG is a 1200 V/254 A full Silicon Carbide (SiC) power module featuring a boost chopper configuration. It offers high-speed switching, low RDS(on), and ultra-low loss SiC Power MOSFETs with zero reverse and forward recovery SiC Schottky Diodes. The module boasts low stray inductance, a Kelvin source for easy drive, an internal thermistor for temperature monitoring, and an Aluminum Nitride (AlN) substrate for improved thermal performance. Key benefits include high efficiency, outstanding performance at high frequencies, direct mounting to heatsinks due to its isolated package, low junction-to-case thermal resistance, and RoHS compliance. It is designed for applications such as induction heating and welding, solar inverters, and uninterruptible power supplies.
| Parameter | Symbol | Unit | Min | Typ | Max | Test Conditions |
| SiC MOSFET Characteristics (Per MOSFET) | ||||||
| Drain-source voltage | VDSS | V | 1200 | TC = 25 C | ||
| Continuous drain current | ID | A | 254 | TC = 25 C | ||
| Pulsed drain current | IDM | A | 500 | TC = 80 C | ||
| Gate-source voltage | VGS | V | -10 | 25 | ||
| Drain-source ON resistance | RDS(on) | m | 8.4 | 10.4 | 13.4 | TJ = 25 C, VGS = 20 V, ID = 120 A |
| Gate threshold voltage | VGS(th) | V | 1.8 | 2.8 | VGS = VDS, ID = 3 mA | |
| Zero gate voltage drain current | IDSS | A | 300 | VGS = 0 V; VDS = 1200 V | ||
| Gate-source leakage current | IGSS | nA | 300 | VGS = 20 V, VDS = 0 V | ||
| Input capacitance | Ciss | pF | 8100 | 9060 | VGS = 0 V, VDS = 1000 V, f = 1 MHz | |
| Output capacitance | Coss | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz | |||
| Reverse transfer capacitance | Crss | pF | 75 | VGS = 0 V, VDS = 1000 V, f = 1 MHz | ||
| Total gate charge | Qg | nC | 696 | VGS = 5 V/20 V, VBus = 800 V, ID = 120 A | ||
| Gate-source charge | Qgs | nC | 123 | VGS = 5 V/20 V, VBus = 800 V, ID = 120 A | ||
| Gate-drain charge | Qgd | nC | 150 | VGS = 5 V/20 V, VBus = 800 V, ID = 120 A | ||
| Turn-on delay time | Td(on) | ns | 30 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 | ||
| Rise time | Tr | ns | 50 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 | ||
| Turn-off delay time | Td(off) | ns | 25 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGoff = 1.6 | ||
| Fall time | Tf | ns | 50 | VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGoff = 1.6 | ||
| Turn on energy | Eon | mJ | 3.0 | TJ = 150 C, VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGon = 2.7 | ||
| Turn off energy | Eoff | mJ | 2.0 | TJ = 150 C, VGS = 5 V/20 V, VBus = 600 V, ID = 150 A, RGoff = 1.6 | ||
| Internal gate resistance | RGint | 2.0 | ||||
| Junction-to-case thermal resistance | RthJC | C/W | 0.141 | |||
| Body Diode Ratings and Characteristics (Per MOSFET) | ||||||
| Diode forward voltage | VSD | V | 4.0 | VGS = 0 V; ISD = 120 A | ||
| Diode forward voltage | VSD | V | 4.2 | VGS = 5V ; ISD = 120 A | ||
| Reverse recovery time | trr | ns | 90 | ISD = 120 A; VGS = 5 V, VR = 800 V; diF/dt = 3000 A/s | ||
| Reverse recovery charge | Qrr | nC | 1650 | ISD = 120 A; VGS = 5 V, VR = 800 V; diF/dt = 3000 A/s | ||
| Reverse recovery current | Irr | A | 40.5 | ISD = 120 A; VGS = 5 V, VR = 800 V; diF/dt = 3000 A/s | ||
| SiC Schottky Diode Ratings and Characteristics | ||||||
| Peak repetitive reverse voltage | VRRM | V | 1200 | |||
| Reverse leakage current | IRM | A | 60 | 1200 | TJ = 25 C, VR = 1200 V | |
| Reverse leakage current | IRM | A | 900 | TJ = 175 C, VR = 1200 V | ||
| DC forward current | IF | A | 180 | TC = 100 C | ||
| Diode forward voltage | VF | V | 1.5 | 1.8 | TJ= 25 C, IF = 180 A | |
| Diode forward voltage | VF | V | 2.1 | TJ = 175 C, IF = 180 A | ||
| Total capacitive charge | Qc | nC | 780 | VR = 600 V | ||
| Total capacitance | C | pF | 846 | f = 1 MHz, VR = 400 V | ||
| Total capacitance | C | pF | 630 | f = 1 MHz, VR = 800 V | ||
| Junction-to-case thermal resistance | RthJC | C/W | 0.175 | |||
| Thermal and Package Characteristics | ||||||
| RMS isolation voltage, any terminal to case | VISOL | V | 4000 | t = 1 min, 50 Hz/60 Hz | ||
| Operating junction temperature range | TJ | C | -40 | 175 | ||
| Recommended junction temperature under switching conditions | TJOP | C | -40 | 125 | ||
| Storage temperature range | TSTG | C | -40 | 125 | ||
| Operating case temperature | TC | C | -40 | 125 | ||
| Mounting torque | Torque | N.m | 2 | 3 | M4 To heatsink | |
| Package weight | Wt | g | 110 | |||
| Temperature Sensor NTC | ||||||
| Resistance at 25 C | R25 | k | 50 | |||
| R25/R25 | % | 5 | ||||
| B25/85 | K | 3952 | T25 = 298.15 K | |||
| B/B | % | 4 | TC = 100 C | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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