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Hefei Purple Horn E-Commerce Co., Ltd.

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China Integrated high voltage intelligent power module LINKOSEMI LKS1D3007D designed
China Integrated high voltage intelligent power module LINKOSEMI LKS1D3007D designed

  1. China Integrated high voltage intelligent power module LINKOSEMI LKS1D3007D designed

Integrated high voltage intelligent power module LINKOSEMI LKS1D3007D designed

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High-side Bias Voltage(Vbs) 12V~18V
Operating temperature -40℃~+150℃
Voltage - Isolation -
Frequency - Switching 20kHz
Description 20kHz ESOP-13 Power Driver Modules RoHS
Mfr. Part # LKS1D3007D
Package ESOP-13
Model Number LKS1D3007D

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  1. Product Details
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Product Specification

High-side Bias Voltage(Vbs) 12V~18V Operating temperature -40℃~+150℃
Voltage - Isolation - Frequency - Switching 20kHz
Description 20kHz ESOP-13 Power Driver Modules RoHS Mfr. Part # LKS1D3007D
Package ESOP-13 Model Number LKS1D3007D

Product Description

The LKS1D3007D is a high-voltage, single-phase Intelligent Power Module (IPM) that integrates a high-voltage IC and high-performance MOSFETs. It is designed for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The low-side MOSFET source can be utilized for current sampling. The input stage features a Schmitt trigger and is compatible with 3.3V, 5V, and 15V logic levels. The LKS1D3007D is housed in an ESOP13 package.

Key features include a built-in 300V/7A MOSFET, bootstrap diode, high robustness against negative transient voltages, a gate drive voltage range of 10V to 20V, and input logic level compatibility with 3.3V, 5V, and 15V. It supports Under-Voltage Lockout (UVLO) on both high-side and low-side, and an internal dead-time generation prevents shoot-through between upper and lower transistors. Applications include high-speed fans, fans, and power tools.

Product Attributes

  • Brand: BPSemi
  • Origin: China (implied by language and company name)
  • Package: ESOP13
  • Certifications: None explicitly mentioned
  • Material: Not specified
  • Color: Not specified

Technical Specifications

ParameterSymbolConditionsMinTypicalMaxUnitNotes
Absolute Maximum Ratings
MOSFET Drain-Source VoltageVDSSIDSS = 250uA300V
MOSFET Continuous Operating CurrentIDTC=257ANote 2
MOSFET Continuous Operating CurrentIDTC=100TBDANote 2
Maximum Power Dissipation (Single MOSFET)PDTC=100TBDW
Operating Junction TemperatureTJ-40150
Storage TemperatureTSTG-40125
Recommended Operating Conditions
Power Stage Supply VoltageVPNBetween P and N pins170240V
Control Supply VoltageVCCBetween VCC and COM pins12.015.018.0V
High-Side Bias VoltageVBSBetween VB and VS pins12.015.018.0V
Input Turn-On Voltage ThresholdVIN(ON)Between VIN and COM pins3.0VCCV
Input Turn-Off Voltage ThresholdVIN(OFF)Between VIN and COM pins00.4V
Dead Time for Shoot-Through PreventionTDEADVCC = VBS = 12.0 ~ 18.0V, TJ <150C1.0usNote 4 (Internal typical 100ns)
PWM Switching FrequencyFPWMTJ <150C20KHz
Electrical Characteristics (Inverter Section)
MOSFET Drain-Source Breakdown VoltageBVDSSVIN = 0 V, ID = 250 uA300V
MOSFET Cut-off Drain CurrentIDSSVIN = 0 V, VDS = 300 V1uA
Body Diode Forward VoltageVSDVCC = VBS = 15V, VIN = 0 V, ID = -7 A1.4V
MOSFET On-ResistanceRDS(ON)VCC = VBS = 15 V, VIN = 5 V, ID =0.5A0.73ohm
Switching Times (TON, TOFF, Irr, Trr, Tr, Tf)VPN =240 V, VCC = VBS = 15 V, ID =7A, VIN = 0~5 V, Inductive Load L = 2.8 mHTON: 600 ns
TOFF: 210 ns
Irr: 5.2 A
Trr: 64 ns
Tr: 41 ns
Tf: 10 ns
ns/A
Switching Energy (EON, EOFF)EON: 135 uJ
EOFF: 17 uJ
uJ
Electrical Characteristics (Control Section)
Quiescent VCC Supply CurrentIQCCVCC = 15V, VIN = 0V50uA
IPM Operating VCC Supply CurrentISWVCC=15V, VIN=15KHzTBDmA
Quiescent VBS Supply CurrentIQBVBS = 15V, VIN = 0V35uA
VCC Undervoltage Protection (Rising Edge)VCC_ON8.5V
VBS Undervoltage Protection (Rising Edge)VBS_ON8.7V
VCC Undervoltage Protection (Falling Edge)VCC_UVLO7.6V
VBS Undervoltage Protection (Falling Edge)VBS_UVLO7.8V
VCC Voltage HysteresisVCC_HYS0.9V
VBS Voltage HysteresisVBS_HYS0.9V
Input High Level Voltage ThresholdVIHLogic High Level2.4V
Input Low Level Voltage ThresholdVILLogic Low Level0.6V
Electrical Characteristics (Bootstrap Diode)
Forward VoltageVFBIF = 0.8A1.65V
Reverse Recovery TimeTRRBIF = 0.5A40ns

2402210951_LINKOSEMI-LKS1D3007D_C20618095.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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