| High-side Bias Voltage(Vbs) | 12V~18V |
| Operating temperature | -40℃~+150℃ |
| Voltage - Isolation | - |
| Frequency - Switching | 20kHz |
| Description | 20kHz ESOP-13 Power Driver Modules RoHS |
| Mfr. Part # | LKS1D5005DT |
| Package | ESOP-13 |
| Model Number | LKS1D5005DT |
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Product Specification
| High-side Bias Voltage(Vbs) | 12V~18V | Operating temperature | -40℃~+150℃ |
| Voltage - Isolation | - | Frequency - Switching | 20kHz |
| Description | 20kHz ESOP-13 Power Driver Modules RoHS | Mfr. Part # | LKS1D5005DT |
| Package | ESOP-13 | Model Number | LKS1D5005DT |
The LKSP1D5005DT is a high-voltage single-phase Intelligent Power Module (IPM) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The low-side MOSFET source can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKSP1D5005DT is available in an ESOP13 package.
| Parameter | Condition | Min | Typical | Max | Unit | Notes |
| Absolute Maximum Ratings | ||||||
| VCC (Control Supply Voltage) | VCC and COM terminals | 10 | 20 | V | ||
| VBS (High-side Bias Voltage) | VB and VS terminals | -0.3 | 25 | V | ||
| VIN (Input Signal Voltage) | VIN and COM terminals | -0.3 | VCC+0.3 | V | ||
| TJ (Operating Junction Temperature) | -40 | 150 | Note 2 | |||
| TSTG (Storage Temperature) | -40 | 125 | ||||
| VDSS (MOSFET Drain-Source Voltage) | 500 | V | ||||
| ID (MOSFET Continuous Operating Current) | TC=25 | 5 | A | Note 2 | ||
| Recommended Operating Conditions | ||||||
| VPN (Power Supply Voltage) | Between PN terminals | 300 | 400 | V | ||
| VCC (Control Supply Voltage) | Between VCC and COM terminals | 12.0 | 15.0 | 18.0 | V | |
| VBS (High-side Bias Voltage) | Between VB and VS terminals | 12.0 | 15.0 | 18.0 | V | |
| TDEAD (Dead Time) | VCC = VBS = 12.0 ~ 18.0V, TJ <150C | 1.0 | us | |||
| FPWM (PWM Switching Frequency) | TJ <150C | 15 | KHz | |||
| Electrical Characteristics | ||||||
| BVDSS (Drain-Source Breakdown Voltage) | VIN = 0 V, ID = 250 uA | 500 | V | |||
| RDS(ON) (MOSFET On-Resistance) | VCC = VBS = 15 V, VIN = 5 V, ID =2.5A | 1.4 | ohm | |||
| TON (Turn-on Time) | VPN =400 V, VCC = VBS = 15 V, ID =5A, VIN = 0~5 V, Inductive Load L = 2.8 mH | 780 | ns | High-side and low-side MOSFET | ||
| TOFF (Turn-off Time) | 250 | ns | High-side and low-side MOSFET | |||
| VFB (Bootstrap Diode Forward Voltage) | IF = 0.8A | 1.65 | V | |||
| TRRB (Bootstrap Diode Reverse Recovery Time) | IF = 0.5A | 40 | ns | |||
| IQCC (Quiescent VCC Supply Current) | VCC = 15V, VIN = 0V | 180 | uA | |||
| VCC_UVLO (VCC Undervoltage Lockout) | Falling edge | 8.1 | V | |||
| VBS_UVLO (VBS Undervoltage Lockout) | Falling edge | 7.8 | V | |||
| VIH (Input High Threshold Voltage) | 2.9 | V | ||||
| VIL (Input Low Threshold Voltage) | 0.45 | V | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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