| Description | Power Driver Modules RoHS |
| Mfr. Part # | FF55MR12W1M1HB70BPSA1 |
| Model Number | FF55MR12W1M1HB70BPSA1 |
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Product Specification
| Description | Power Driver Modules RoHS | Mfr. Part # | FF55MR12W1M1HB70BPSA1 |
| Model Number | FF55MR12W1M1HB70BPSA1 |
The EasyDUAL module, featuring a CoolSiC Trench MOSFET and PressFIT technology with an integrated NTC temperature sensor, is designed for high-frequency switching applications. Its low inductive design and low switching losses contribute to efficient operation. The module offers rugged mounting with integrated clamps and an AlN substrate for low thermal resistance, making it suitable for demanding industrial applications.
| Parameter | Symbol | Note or test condition | Values | Unit |
| General Module Characteristics | ||||
| Stray inductance module | LsCE | 14 | nH | |
| Module lead resistance, terminals - chip | RCC'+EE' | TH = 25 C, per switch | 5.3 | m |
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting force per clamp | F | 20 to 50 | N | |
| Weight | G | 24 | g | |
| MOSFET Maximum Rated Values | ||||
| Drain-source voltage | VDSS | Tvj = 25 C | 1200 | V |
| Continuous DC drain current | IDDC | Tvj = 175 C, VGS = 18 V, TH = 125 C | 15 | A |
| Repetitive peak drain current | IDRM | verified by design, tp limited by Tvjmax | 30 | A |
| Gate-source voltage, max. transient voltage | VGS | D < 0.01 | -10/23 | V |
| Gate-source voltage, max. static voltage | VGS | -7/20 | V | |
| MOSFET Characteristic Values | ||||
| Drain-source on-resistance | RDS(on) | ID = 15 A, VGS = 18 V, Tvj = 25 C | 52.9 | m |
| Drain-source on-resistance | RDS(on) | ID = 15 A, VGS = 18 V, Tvj = 125 C | 85.5 | m |
| Drain-source on-resistance | RDS(on) | ID = 15 A, VGS = 18 V, Tvj = 150 C | 98.5 | m |
| Gate threshold voltage | VGS(th) | ID = 6 mA, VDS = VGS, Tvj = 25 C | 3.45 to 5.15 | V |
| Total gate charge | QG | VDD = 800 V, VGS = -3/18 V | 0.045 | C |
| Input capacitance | CISS | f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C | 1.35 | nF |
| Output capacitance | COSS | f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C | 0.064 | nF |
| Reverse transfer capacitance | Crss | f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C | 0.004 | nF |
| Turn-on energy loss per pulse | Eon | ID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGon = 3.9 , di/dt = 1.8 kA/s (Tvj = 150 C), Tvj = 150 C | 0.316 | mJ |
| Turn-off energy loss per pulse | Eoff | ID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGoff = 3.3 , dv/dt = 27.7 kV/s (Tvj = 150 C), Tvj = 150 C | 0.042 | mJ |
| Thermal resistance, junction to heat sink | RthJH | per MOSFET, grease = 1 W/(mK) | 1.25 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 150 | C | |
| Body Diode (MOSFET) Characteristic Values | ||||
| Forward voltage | VSD | ISD = 15 A, VGS = -3 V, Tvj = 25 C | 4.2 to 5.35 | V |
| Forward voltage | VSD | ISD = 15 A, VGS = -3 V, Tvj = 150 C | 3.85 | V |
| NTC-Thermistor Characteristic Values | ||||
| Rated resistance | R25 | TNTC = 25 C | 5 | k |
| B-value | B25/100 | R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] | 3433 | K |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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