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Hefei Purple Horn E-Commerce Co., Ltd.

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China Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt
China Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt

  1. China Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt

Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt

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Description Power Driver Modules RoHS
Mfr. Part # MSCSM70TAM05TPAG
Model Number MSCSM70TAM05TPAG

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  1. Product Details
  2. Company Details

Product Specification

Description Power Driver Modules RoHS Mfr. Part # MSCSM70TAM05TPAG
Model Number MSCSM70TAM05TPAG

Product Overview

The MSCSM70TAM05TPAG is a triple phase leg 700 V/349 A full silicon carbide (SiC) power module. It offers low RDS(on), high-speed switching, and ultra-low loss with very low stray inductance and a Kelvin source for easy drive. An internal thermistor provides temperature monitoring, and the Aluminum Nitride (AlN) substrate enhances thermal performance. This module enables high-efficiency converters, outstanding performance at high-frequency operation, and direct mounting to heatsinks due to its isolated package and low junction-to-case thermal resistance. Solderable terminals facilitate easy PCB mounting. It is designed for applications such as uninterruptible power supplies, switched-mode power supplies, EV motor and traction drives, and welding converters.

Product Attributes

  • Brand: Microsemi
  • Material: Silicon Carbide (SiC), Aluminum Nitride (AlN)
  • Certifications: RoHS compliant

Technical Specifications

ParameterSymbolUnitMinTypMaxTest Conditions
SiC MOSFET Characteristics (Per MOSFET)
Drain-source voltageVDSSV700
Continuous drain currentIDA278349TC = 80 C, TC = 25 C
Pulsed drain currentIDMA700
Gate-source voltageVGSV-1025
Drain-source ON resistanceRDS(on)m56.4TJ = 25 C, VGS = 20 V, ID = 120 A
Drain-source ON resistanceRDS(on)m6.3TJ = 175 C, VGS = 20 V, ID = 120 A
Power dissipationPDW966TC = 25 C
Zero gate voltage drain currentIDSSA300VGS = 0 V, VDS = 700 V
Gate threshold voltageVGS(th)V1.92.4VGS = VDS, ID = 12 mA
Gate-source leakage currentIGSSnA300VGS = 20 V, VDS = 0 V
Input capacitanceCissnF13.5VGS = 0 V, VDS = 700 V, f = 1 MHz
Output capacitanceCossnF1.5VGS = 0 V, VDS = 700 V, f = 1 MHz
Reverse transfer capacitanceCrssnF0.09VGS = 0 V, VDS = 700 V, f = 1 MHz
Total gate chargeQgnC174645VGS = 5 V/20 V, VBus = 470 V, ID= 120 A
Gate-source chargeQgsnC105VGS = 5 V/20 V, VBus = 470 V, ID= 120 A
Gate-drain chargeQgdnCVGS = 5 V/20 V, VBus = 470 V, ID= 120 A
Turn-on delay timeTd(on)ns3540VGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Rise timeTrns50VGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Turn-off delay timeTd(off)ns20VGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Fall timeTfnsVGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Turn on energyEonmJ0.561.96TJ = 150 C, VBus = 400 V, ID = 160 A, RGon = 9 , RGoff = 1.6
Turn off energyEoffmJTJ = 150 C, VBus = 400 V, ID = 160 A, RGon = 9 , RGoff = 1.6
Internal gate resistanceRGint1.9
Junction-to-case thermal resistanceRthJCC/W0.155
Body Diode Ratings and Characteristics (Per SiC MOSFET)
Diode forward voltageVSDV3.43.8VGS = 0 V; ISD = 120 A, VGS = 5V ; ISD = 120 A
Reverse recovery timetrrns38ISD = 120 A; VGS = 5 V, VR = 400 V; diF/dt = 3000 A/s
Reverse recovery chargeQrrnC954ISD = 120 A; VGS = 5 V, VR = 400 V; diF/dt = 3000 A/s
Reverse recovery currentIrrA44ISD = 120 A; VGS = 5 V, VR = 400 V; diF/dt = 3000 A/s
Thermal and Package Characteristics
RMS isolation voltage, any terminal to caseVISOLV4000t = 1 min, 50 Hz/60 Hz
Operating junction temperature rangeTJC-40175
Recommended junction temperature under switching conditionsTJOPC-40125
Storage temperature rangeTSTGC-40125
Operating case temperatureTCC-40125
Mounting torqueN.m35M6 To heatsink
Package weightWtg250
Temperature Sensor NTC
Resistance at 25 CR25k50
B25/853952

2411272101_MICROCHIP-MSCSM70TAM05TPAG_C3615359.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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