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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low level analog switching device onsemi J112 N channel switch Pb free with
China Low level analog switching device onsemi J112 N channel switch Pb free with

  1. China Low level analog switching device onsemi J112 N channel switch Pb free with

Low level analog switching device onsemi J112 N channel switch Pb free with

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Operating Temperature -55℃~+150℃@(Tj)
Pd - Power Dissipation 625mW
Drain Current (Idss) 5mA@15V
FET Type -
RDS(on) 50Ω
Gate-Source Breakdown Voltage (Vgss) 35V
Gate-Source Cutoff Voltage (VGS(off)) 1V@1uA
Description 625mW 5mA@15V 50Ω 35V TO-92-3L JFETs RoHS
Mfr. Part # J112
Package TO-92-3L
Model Number J112

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Product Specification

Operating Temperature -55℃~+150℃@(Tj) Pd - Power Dissipation 625mW
Drain Current (Idss) 5mA@15V FET Type -
RDS(on) 50Ω Gate-Source Breakdown Voltage (Vgss) 35V
Gate-Source Cutoff Voltage (VGS(off)) 1V@1uA Description 625mW 5mA@15V 50Ω 35V TO-92-3L JFETs RoHS
Mfr. Part # J112 Package TO-92-3L
Model Number J112

Product Overview

The J111, J112, J113, MMBFJ111, MMBFJ112, and MMBFJ113 are N-Channel switches designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. These devices are sourced from Process 51, and their source and drain terminals are interchangeable. They are available as Pb-Free devices.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: Sourced from Process 51
  • Interchangeable Terminals: Source & Drain
  • Certifications: PbFree devices

Technical Specifications

ModelParameterValueUnit
J111 / J112 / J113Total Device Dissipation (PD)625mW
Derate Above 25C5.0mW/C
Thermal Resistance, JunctiontoCase (R JC)125C/W
Thermal Resistance, JunctiontoAmbient (R JA)200C/W
GateSource Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A, VDS = 035V
Gate Reverse Current (IGSS) @ VGS = 15 V, VDS = 01.0nA
GateSource CutOff Voltage (VGS(off)) @ VDS = 5 V, ID = 1.0 mAJ111: 3.0 to 10.0 V
J112: 1.0 to 5.0 V
J113: 0.5 to 3.0 V
V
MMBFJ111 / MMBFJ112 / MMBFJ113Total Device Dissipation (PD)350mW
Derate Above 25C2.8mW/C
Thermal Resistance, JunctiontoAmbient (R JA)357C/W
GateSource Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A, VDS = 035V
Gate Reverse Current (IGSS) @ VGS = 15 V, VDS = 01.0nA
GateSource CutOff Voltage (VGS(off)) @ VDS = 5 V, ID = 1.0 mAJ111: 3.0 to 10.0 V
J112: 1.0 to 5.0 V
J113: 0.5 to 3.0 V
V
All ModelsDrain Cutoff Leakage Current (ID(off)) @ VDS = 5.0 V, VGS = 10 V1.0nA
ZeroGate Voltage Drain Current (IDSS) @ VDS = 15 V, VGS = 0J111: 20 mA
J112: 5.0 mA
J113: 2.0 mA
mA
DrainSource On Resistance (rDS(on)) @ VDS 0.1 V, VGS = 0J111: 30
J112: 50
J113: 100
DrainGate & SourceGate On Capacitance (Cdg(on), Csg(on)) @ VDS = 0, VGS = 0, f = 1.0 MHz28pF
DrainGate Off Capacitance (Cdg(off)) @ VDS = 0, VGS = 10 V, f = 1.0 MHz5.0pF
SourceGate Off Capacitance (Csg(off)) @ VDS = 0, VGS = 10 V, f = 1.0 MHz5.0pF
Forward Gate Current (IGF)50mA
Operating and Storage Junction Temperature Range (TJ, TSTG)55 to 150C
DrainGate Voltage (VDG)35V
GateSource Voltage (VGS)35V

2410121853_onsemi-J112_C719815.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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