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Hefei Purple Horn E-Commerce Co., Ltd.

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China Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for
China Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for

  1. China Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for

Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for

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Voltage - Supply 13.5V~16.5V
Quiescent Current(Iq) 360uA
High-side Bias Voltage(Vbs) 13.5V~16.5V
Configuration Half Bridge
Operating temperature -40℃~+150℃
Voltage - Isolation 1500Vrms
Frequency - Switching 20kHz
Description 20kHz PQFN-26(5x6) Power Driver Modules RoHS
Mfr. Part # NSH505PQ
Package PQFN-26(5x6)
Model Number NSH505PQ

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Product Specification

Voltage - Supply 13.5V~16.5V Quiescent Current(Iq) 360uA
High-side Bias Voltage(Vbs) 13.5V~16.5V Configuration Half Bridge
Operating temperature -40℃~+150℃ Voltage - Isolation 1500Vrms
Frequency - Switching 20kHz Description 20kHz PQFN-26(5x6) Power Driver Modules RoHS
Mfr. Part # NSH505PQ Package PQFN-26(5x6)
Model Number NSH505PQ

NSH505PQ 5A, 500V Half-Bridge IPM

The NSH505PQ is a 5A, 500V half-bridge intelligent power module designed for motor drive applications. It integrates MOSFET gate drivers and bootstrap functionality within a compact PQFN 5x6mm package, offering flexible application for single-phase and three-phase DC brushless motor drives. Key features include under-voltage lockout for both channels, high-level effective input support (3.3V, 5V, and 15V), integrated gate drivers with bootstrap functionality, temperature detection output for MCU control, cross-conduction prevention logic, and high isolation (1500 VRMS min). It boasts a 500V maximum operating voltage and a 5A peak pulse current capability at 25C.

Product Attributes

  • Brand: NSIC Technology (Wuxi) Co., LTD
  • Origin: Wuxi, China
  • Product Name: NSH505PQ
  • Package Type: PQFN5x6
  • Body Size: 5mm x 6mm

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDSS (Drain-Source Voltage of Each MOSFET) TC = 25C 500 V
ID (Each MOSFET Current, Continuous) TC = 25C 2.5 A
ID (Each MOSFET Current, Continuous) TC = 75C 1.75 A
IDM (Each MOSFET Pulse Current, Peak) TC = 25C, < 100us 5 A
IDM (Each MOSFET Pulse Current, Peak) TC = 75C 3.5 A
IDrms (Each MOSFET Current, Rms) TC = 25C, FPWM <20KHz 0.85 Arms
PD (Maximum Power Dissipation for each MOSFET) TC = 25C 14.2 W
VCC (Control Supply Voltage) Applied between VCC and COM 20 V
VBS (High-side Bias Voltage) Applied between VB and VS 20 V
VIN (Input Signal Voltage) Applied between VIN and COM -0.3 VCC+0.3 V
VRRMB (Maximum Repetitive Reverse Voltage) Tc = 25C 500 V
IFB (Forward Current) Tc = 25C 0.25 A
IFPB (Forward Peak Current, Peak) Tc = 25C, < 1mS 0.5 A
Tj (Operating Junction Temperature) -40 150
TSTG (Storage Temperature) Tc = 25C -40 125
ISO (Isolation Voltage) 60Hz, Sinusoidal, AC 1 min, between pins and heat-sink plate 1500 Vrms
Rth(J-B) (Thermal resistance, junction to mounting pad, each MOSFET) For Each MOSFET 1.0 C/W
Rth(J-A) (Thermal resistance, junction to ambient, each MOSFET) For Each MOSFET 40 C/W
Recommended Operating Conditions
VPN (Supply Voltage) Applied between P and N 300 450 V
VCC (Control Supply Voltage) Applied between VCC and COM 13.5 15.0 16.5 V
VBS (High-Side Bias Voltage) Applied between VB and VS 13.5 15.0 16.5 V
VIN(ON) (Input ON Threshold Voltage) Applied between VIN and COM 3.0 VCC V
VIN(OFF) (Input OFF Threshold Voltage) 0 0.6 V
tded (Blanking Time for Preventing Arm-Short) VCC = VBS = 13.5 ~ 16.5 V, Tj <150C 1.0 s
FPWM (PWM Switching Frequency) Tj <150C 15 20 kHz
Electrical Characteristics
BVDSS (Drain - Source Breakdown Voltage) VIN = 0 V, ID = 1 mA 500 V
IDSS (Zero Gate Voltage Drain Current) VIN = 0 V, VDS = 500 V 1 mA
VSD (Drain - Source Diode Forward Voltage) VCC = VBS = 15V, VIN = 0 V, ID =-0.5 A 0.9 V
RDS(on) (Drain-Source Turn-On Resistance) VCC = VBS = 15 V, VIN = 5 V, ID =0.5 A 2 2.5 ohm
tON (Switching Times) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 920 ns
tOFF (Switching Times) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 520 ns
trr (Switching Times) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 210 ns
EON (Switching Energy) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 40 J
EOFF (Switching Energy) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 10 J

2505091635_WXNSIC-NSH505PQ_C48735684.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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