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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive
China N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive

  1. China N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive
  2. China N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive
  3. China N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive

N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive

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Description Power Driver Modules RoHS
Mfr. Part # SLC500MM15SHN2
Model Number SLC500MM15SHN2

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  1. Product Details
  2. Company Details

Product Specification

Description Power Driver Modules RoHS Mfr. Part # SLC500MM15SHN2
Model Number SLC500MM15SHN2

Product Overview

The SLC500MM15SHN2 is an automotive-grade 150V N-Channel MOSFET half-bridge power module designed for high-current density applications. It features high ruggedness, easy paralleling, and low on-state resistance, making it suitable for DC/DC converters, UPS systems, AC motor control, and solar applications.

Product Attributes

  • Brand: SCILICON
  • Type: N-Channel MOSFET, Half-Bridge Power Module
  • Certification: Automotive Grade

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Static Characteristics
Drain-source breakdowm voltageV(BR)DSSVGS=0,ID=1mA,Tj=25150V
Gate threshold voltageVGS(th)VDS=150V45V
Zero gate voltage drain currentIDSSVGS=0V, Tj=125400nA
Gate-source leakage currentIGSSVDS=0V,VGS=20V,Tj=25400nA
Drain-source on-state resistanceRDS(ON)VGS=10V,ID=100A,Tj=251.2m
Drain-source on-state resistanceRDS(ON)VGS=10V,ID=100A,Tj=1001.7m
Dynamic Characteristics
Input CapacitanceCissVDS=40V,ID=100A,VGS=10V20nF
Output CapacitanceCossVGS=026nF
Reverse transfer capacitanceCrssVDS=40V120pF
Turn-on delay timetd(on)VDS=96V,VGS=15V,ID=530A,RG,ext=10,Tj=25173ns
Turn-off delay timetd(off)VDS=96V,VGS=15V,ID=530A,RG,ext=10,Tj=251538nC
Total gate chargeQGVDS=96V,VGS=15V,ID=530A,Tj=25524nC
Turn-on energy loss per pulseEonTBDmJ
Turn-off energy loss per pulseEoffTBDmJ
Body Diode Characteristics
Diode continuous forward currentIS500A
Diode pulse forward currentIS,pulse1500A
Forward voltageVSDIS=50A,VGS=0V,Tj=251.2V
Reverse recovery timetrrVR=50V,IS=50A,di/dt=200A/us500ns
Reverse recovery chargeQrrVR=50V,IS=50A,di/dt=200A/us1000nC
Maximum Rated Values
Drain-source voltageVDSTj=25150V
DC drain currentID nomTj=25500A
Pulsed drain currentID,pulseVGS=10V,TC=253500A
Avalanche energy, single pulseEASL=2mH,Rg=252880mJ
Power dissipationPtotTvjMAX=175TC=251500W
Module Features
Thermal resistance, junction to heatsinkRthJH0.157K/W
Storage temperatureTstg-55175
Maximum baseplate operation temperatureTBPmax100
WeightG36.5g
Module baseplate materialMaterial of module baseplateCu
Internal isolationInternal isolationAl2O3
Isolation test voltageVISOLRMS,f=50Hz,t=0.3sTBDkV

2506271720_SCILICON-SLC500MM15SHN2_C49257182.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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