| Impedance(Zzt) | 30Ω |
| Diode Configuration | Independent |
| Zener Voltage(Range) | 13.8V~15.6V |
| Pd - Power Dissipation | 500mW |
| Zener Voltage(Nom) | 15V |
| Description | Zener Diode Independent 15V 500mW Through Hole DO-35 |
| Mfr. Part # | BZX55C15V |
| Package | DO-35 |
| Model Number | BZX55C15V |
View Detail Information
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Product Specification
| Impedance(Zzt) | 30Ω | Diode Configuration | Independent |
| Zener Voltage(Range) | 13.8V~15.6V | Pd - Power Dissipation | 500mW |
| Zener Voltage(Nom) | 15V | Description | Zener Diode Independent 15V 500mW Through Hole DO-35 |
| Mfr. Part # | BZX55C15V | Package | DO-35 |
| Model Number | BZX55C15V |
Silicon Planar Zener Diodes. The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request.
| Type | Zener Voltage Range (V) | VZT at IZT (V) | IZT (mA) | ZZT Max. () | ZZK at IZK Max. () | IZK (mA) | IR at VR Max. (A) | Temp. Coefficient of Zener Voltage TKvz (%/K) |
| BZX55C0V8 | 0.73...0.83 | 0.8 | 5 | 8 | 50 | 1 | - | -0.26...-0.23 |
| BZX55C2V0 | 1.8...2.15 | 2 | 5 | 85 | 600 | 1 | 100 | -0.09...-0.06 |
| BZX55C2V2 | 2.08...2.33 | 2.2 | 5 | 85 | 600 | 1 | 75 | -0.09...-0.06 |
| BZX55C2V4 | 2.28...2.56 | 2.4 | 5 | 85 | 600 | 1 | 50 | -0.09...-0.06 |
| BZX55C2V7 | 2.5...2.9 | 2.7 | 5 | 85 | 600 | 1 | 10 | -0.09...-0.06 |
| BZX55C3V0 | 2.8...3.2 | 3 | 5 | 85 | 600 | 1 | 4 | -0.08...-0.05 |
| BZX55C3V3 | 3.1...3.5 | 3.3 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V6 | 3.4...3.8 | 3.6 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V9 | 3.7...4.1 | 3.9 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C4V3 | 4...4.6 | 4.3 | 5 | 75 | 600 | 1 | 1 | -0.06...-0.03 |
| BZX55C4V7 | 4.4...5 | 4.7 | 5 | 60 | 600 | 1 | 0.5 | -0.05...+0.02 |
| BZX55C5V1 | 4.8...5.4 | 5.1 | 5 | 35 | 550 | 1 | 0.1 | -0.02...+0.02 |
| BZX55C5V6 | 5.2...6 | 5.6 | 5 | 25 | 450 | 1 | 0.1 | -0.05...+0.05 |
| BZX55C6V2 | 5.8...6.6 | 6.2 | 5 | 10 | 200 | 1 | 0.1 | 0.03...0.06 |
| BZX55C6V8 | 6.4...7.2 | 6.8 | 5 | 8 | 150 | 1 | 0.1 | 0.03...0.07 |
| BZX55C7V5 | 7...7.9 | 7.5 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.07 |
| BZX55C8V2 | 7.7...8.7 | 8.2 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.08 |
| BZX55C9V1 | 8.5...9.6 | 9.1 | 5 | 10 | 50 | 1 | 0.1 | 0.03...0.09 |
| BZX55C10 | 9.4...10.6 | 10 | 5 | 15 | 70 | 1 | 0.1 | 0.03...0.1 |
| BZX55C11 | 10.4...11.6 | 11 | 5 | 20 | 70 | 1 | 0.1 | 0.03...0.11 |
| BZX55C12 | 11.4...12.7 | 12 | 5 | 20 | 90 | 1 | 0.1 | 0.03...0.11 |
| BZX55C13 | 12.4...14.1 | 13 | 5 | 26 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C15 | 13.8...15.6 | 15 | 5 | 30 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C16 | 15.3...17.1 | 16 | 5 | 40 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C18 | 16.8...19.1 | 18 | 5 | 50 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C20 | 18.8...21.2 | 20 | 5 | 55 | 220 | 1 | 0.1 | 0.03...0.11 |
| BZX55C22 | 20.8...23.3 | 22 | 5 | 55 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C24 | 22.8...25.6 | 24 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C27 | 25.1...28.9 | 27 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C30 | 28...32 | 30 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C33 | 31...35 | 33 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C36 | 34...38 | 36 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C39 | 37...41 | 39 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C43 | 40...46 | 43 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C47 | 44...50 | 47 | 2.5 | 110 | 600 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C51 | 48...54 | 51 | 2.5 | 125 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C56 | 52...60 | 56 | 2.5 | 135 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C62 | 58...66 | 62 | 2.5 | 150 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C68 | 64...72 | 68 | 2.5 | 200 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C75 | 70...79 | 75 | 2.5 | 250 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 500 1) | mW |
| Junction Temperature | Tj | 175 | C |
| Storage Temperature Range | Tstg | -55 to +175 | C |
| Parameter | Symbol | Value | Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 0.3 1) | K/mW |
| Forward Voltage at IF = 100 mA | VF | 1 | V |
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
2) The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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