Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 15mA |
| Current - Gate Trigger(Igt) | 10mA |
| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 160A@20ms |
| SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Operating Temperature | -40℃~+125℃@(Tj) |
| Description | 15mA 10mA 800V 1 TRIAC TO-262-3 TRIACs RoHS |
| Mfr. Part # | CT316R-800S |
| Package | TO-262-3 |
| Model Number | CT316R-800S |
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Product Specification
| Holding Current (Ih) | 15mA | Current - Gate Trigger(Igt) | 10mA |
| Voltage - On State(Vtm) | 1.55V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 160A@20ms | SCR Type | 1 TRIAC |
| Gate Trigger Voltage (Vgt) | 1.3V | Operating Temperature | -40℃~+125℃@(Tj) |
| Description | 15mA 10mA 800V 1 TRIAC TO-262-3 TRIACs RoHS | Mfr. Part # | CT316R-800S |
| Package | TO-262-3 | Model Number | CT316R-800S |
The CT316R series TRIACs are 5-layer structure devices designed for AC power control applications. They feature a mesa glass passivated technology, high junction temperature capability, and good commutation performance, making them suitable for various industrial and consumer electronics.
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | VTM (V) | IGT (mA) | Package | Description |
| CT316R-600S/C/B | 600 | 16 | 1.55 | S: 10, C: 35, B: 50 | TO-262K | NPNPN 5-layer Structure TRIACs |
| CT316R-800S/C/B | 800 | 16 | 1.55 | S: 10, C: 35, B: 50 | TO-262K | NPNPN 5-layer Structure TRIACs |
| Symbol | Parameter | Test Condition | Value | Unit |
| VDRM/VRRM | Repetitive peak off- state voltage | Tj=25 | 600 / 800 | V |
| IT(RMS) | RMS on-state current | 16 | A | |
| ITSM | Non repetitive surge peak on-state current | Full sine wave, tp=20ms | 160 | A |
| I2t | I2t value | tp=10ms | 140 | A2s |
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=125 | 50 | A/s |
| IGM | Peak gate current | tp=20s, Tj=125 | 4 | A |
| PG(AV) | Average gate power | Tj=125 | 1 | W |
| TSTG | Storage temperature | -40~+150 | ||
| Tj | Operating junction temperature | -40~+125 |
| Symbol | Parameter | Test condition | Quadrant | Value | Unit |
| IGT | Gate trigger current | VD=12V, RL =33 , Tj=25 | -- | 1.3 | mA |
| 5 | mA | ||||
| VGT | Gate trigger voltage | IG =1.2IGT | -- | 5 | V |
| VGD | Non-triggering gate voltage | VD=VDRM, Tj=125 | 0.2 | V | |
| IH | Holding current | IT =500mA | - | 30 | mA |
| 50 | mA | ||||
| IL | Latching current | - | 50 | mA | |
| 80 | mA | ||||
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, Gate Open, Tj=125 | 1000 | V/s | |
| VTM | On-state Voltage | ITM=23A, tp=380s | 1.55 | V | |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=25 | 10 | A | |
| VD=VDRM/VRRM,Tj=125 | 1 | mA |
| Symbol | Parameter | Value | Unit |
| Rth (j-c) | Junction to case (AC) | 1.2 | /W |
| Rth (j-a) | Junction to ambient | 45 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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