| Holding Current (Ih) | 30mA |
| Current - Gate Trigger(Igt) | 25mA |
| Voltage - On State(Vtm) | 1.6V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 12A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 140A |
| Gate Trigger Voltage (Vgt) | 1V |
| Operating Temperature | -40℃~+125℃ |
| Description | 800V 12A Through Hole TO-220 |
| Mfr. Part # | CR812B 2.5-6MA |
| Package | TO-220 |
| Model Number | CR812B 2.5-6MA |
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Product Specification
| Holding Current (Ih) | 30mA | Current - Gate Trigger(Igt) | 25mA |
| Voltage - On State(Vtm) | 1.6V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 12A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 140A | Gate Trigger Voltage (Vgt) | 1V |
| Operating Temperature | -40℃~+125℃ | Description | 800V 12A Through Hole TO-220 |
| Mfr. Part # | CR812B 2.5-6MA | Package | TO-220 |
| Model Number | CR812B 2.5-6MA |
The CR812B is a standard SCR (Silicon Controlled Rectifier) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a PNPN 4-layer structure, mesa glass passivated technology, and multi-layers metal electrodes. This SCR is designed for applications such as LED controllers, motorcycle voltage regulators, and hair straighteners.
| Symbol | Parameter | Test Condition | Value | Unit |
| VDRM/VRRM | Repetitive peak off-state voltage | Tj=25 | 800 | V |
| Tj=125 | 800 | V | ||
| IT(RMS) | RMS on-state current | TO-220BK(TC110) | 12 | A |
| IT(AV) | Average on-state current | TO-220BK(TC110) | 8 | A |
| ITSM | Non repetitive surge peak on-state current | Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5 | 140 | A |
| I2t | I2t value | tp=10ms | 98 | A2s |
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=125 | 50 | A/s |
| IGM | Peak gate current | tp=20s, Tj=125 | 4 | A |
| PG(AV) | Average gate power | Tj=125 | 1 | W |
| VTM | On-state Voltage | ITM=24A, Fig. 4 | 1.6 | V |
| IGT | Gate trigger current | VD=12V, RL=33, Tj=25, Fig. 6 | 0.2 | mA |
| VGT | Gate trigger voltage | IG=1.2IGT, Tj=25 | 1.0 | V |
| VGD | Non-triggering gate voltage | VD=VDRM, RL=3.3k, Tj=125 | 0.2 | V |
| IH | Holding current | IT=500mA, Tj=25 | 8 | mA |
| IL | Latching current | VD=12V, RL=33, Tj=25 | 10 | mA |
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, Gate OPEN,Tj=125 | 30 | V/s |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=25 | 1 | mA |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=125 | 5 | mA |
| TSTG | Storage temperature | -40~+150 | ||
| Tj | Operating junction temperature | TO-220BK | -40~+125 | |
| Rth(j-c) | Junction to case (AC) | 1.3 | /W | |
| Rth(j-a) | Junction to ambient | 60 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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