| Holding Current (Ih) | 50mA |
| Current - Gate Trigger(Igt) | 35mA |
| Voltage - On State(Vtm) | 1.55V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 160A |
| Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Description | TRIAC 800V 16A Through Hole TO-220 |
| Mfr. Part # | CT316B-800C |
| Package | TO-220 |
| Model Number | CT316B-800C |
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Product Specification
| Holding Current (Ih) | 50mA | Current - Gate Trigger(Igt) | 35mA |
| Voltage - On State(Vtm) | 1.55V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 160A | Operating Temperature | -40℃~+125℃ |
| Gate Trigger Voltage (Vgt) | 1.3V | Description | TRIAC 800V 16A Through Hole TO-220 |
| Mfr. Part # | CT316B-800C | Package | TO-220 |
| Model Number | CT316B-800C |
The CT316B series TRIACs are 5-layer structure devices designed for AC power control applications. They feature a glass-passivated mesa technology, high junction temperature capability, and good commutation performance, making them suitable for controlling heaters, mixers, and motor speeds. Available in 600V and 800V versions, these TRIACs offer high dV/dt and dI/dt ratings.
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | VTM (V) | IGT (mA) | Test Condition | Storage Temp () | Operating Temp () |
| CT316B-600S/C/B | 600 | 16 | 1.55 | 10 (S), 35 (C), 50 (B) | ITM=23A, tp=380s | -40~+150 | -40~+125 |
| CT316B-800S/C/B | 800 | 16 | 1.55 | 10 (S), 35 (C), 50 (B) | ITM=23A, tp=380s | -40~+150 | -40~+125 |
| Symbol | Parameter | Value | Unit | Test Condition |
| ITSM | Non repetitive surge peak on-state current | 160 | A | Full sine wave, Tj(init)=25, tp=20ms |
| I2t | I2t value | 140 | A2s | tp=10ms |
| dIT/dt | Critical rate of rise of on-state current | 50 | A/s | IG=2*IGT, tr10ns, F=120HZ, Tj=125 |
| IGM | Peak gate current | 4 | A | tp=20s, Tj=125 |
| PG(AV) | Average gate power | 1 | W | Tj=125 |
| VGT | Gate trigger voltage | 1.3 | V | --, VD=12V, RL=33, Tj=25 |
| VGD | Non-triggering gate voltage | 0.2 | V | VD=VDRM, Tj=125 |
| IH | Holding current | 30 (-), 50 () | mA | IT=500mA, Fig. 6 |
| IL | Latching current | 50 (-), 70 () | mA | IT=500mA, Fig. 6 |
| dVD/dt | Critical rate of rise of off-state | 500 | V/s | VD=67%VDRM, Gate Open Tj=125 |
| IDRM/IRRM | Repetitive peak off- state current | 10 (Tj=25), 50 (Tj=125) | A | VD=VDRM/VRRM |
| Rth(j-c) | Junction to case (AC) | 1.2 | /W | |
| Rth(j-a) | Junction to ambient | 60 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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