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Hefei Purple Horn E-Commerce Co., Ltd.

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China Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and
China Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and

  1. China Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and

Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and

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Holding Current (Ih) 30mA
Current - Gate Trigger(Igt) 10mA
Voltage - On State(Vtm) 1.65V
Average Gate Power Dissipation (PG(AV)) 500mW
Current - On State(It(RMS)) 4A
Peak off - state voltage(Vdrm) 800V
Current - Surge(Itsm@f) 20A
SCR Type 1 TRIAC
Operating Temperature -40℃~+125℃
Gate Trigger Voltage (Vgt) 2V
Description 30mA 10mA 800V 1 TRIAC SOT-223-2L TRIACs RoHS
Mfr. Part # BT134-800E
Package SOT-223-2L
Model Number BT134-800E

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  1. Product Details
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Product Specification

Holding Current (Ih) 30mA Current - Gate Trigger(Igt) 10mA
Voltage - On State(Vtm) 1.65V Average Gate Power Dissipation (PG(AV)) 500mW
Current - On State(It(RMS)) 4A Peak off - state voltage(Vdrm) 800V
Current - Surge(Itsm@f) 20A SCR Type 1 TRIAC
Operating Temperature -40℃~+125℃ Gate Trigger Voltage (Vgt) 2V
Description 30mA 10mA 800V 1 TRIAC SOT-223-2L TRIACs RoHS Mfr. Part # BT134-800E
Package SOT-223-2L Model Number BT134-800E

Product Overview

The BT134-800E is a glass-passivated triac in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability with excellent thermal cycling performance. It is suitable for motor control, industrial and domestic lighting, heating, and static switching applications.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD
  • Origin: Shenzhen, China
  • Package: SOT-223-2L
  • Material: Plastic-Encapsulate
  • Marking: BT134-800E

Technical Specifications

Parameter Symbol Conditions Value Unit
Maximum Ratings VDRM /VRRM (Ta=25C unless otherwise noted) 800 V
Tj Junction Temperature -40 ~ 125 C
Tstg Storage Temperature -40 ~ 150 C
Electrical Characteristics IDRM,IRRM VDRM=VRRM T =25 j C 0.8 mA
VDRM=VRRM T =125 j C 0.8 mA
VGM Peak gate voltage - V
PGM Peak gate power - W
On-State Characteristics IT(RMS) RMS on-state current 16 A
ITSM Non repetitive surge peak on-state current t = 2ms T =25 j C 200 A
I t I t for fusing t = 10 ms 16 A s
VTM On-state voltage IT=2A,tp=380us 1.65 V
I GT Gate trigger current T2(+), G(+) VD=12V RL=100 10 mA
V GT Gate trigger voltage T2(-), G(+) VD=12V RL=100 2.5 V
IH Holding current V D=12V,IGT=100mA 30 mA
Commutation Characteristics (dl/dt)c Critical-rate of rise of commutation current A/ IG=2IGT tr100ns F=120Hz us 50 A/us
dV/dt Critical-rate of rise of commutating voltage VDM=V DRM T =125 j C 20 V/us
t gt Turn-on time ITM =16A ,VDM=V DRM VDM=67%V DRM(MA VDM=400V T =125 j C X) V/ IG =0.1A,dlG/dt=5A/uS 2 us

2508121550_HXY-MOSFET-BT134-800E_C50275354.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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