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The DT1T Series TRIACs are sensitive gate, silicon bidirectional thyristors designed for high commutation performance without the need for a snubber circuit. These devices are compatible with logic-level inputs, making them suitable for a wide range of applications including general purpose motor control, small loads in fan control, solenoid drivers, LED dimming, and digital control drivers. They feature passivated dice for enhanced reliability and uniformity, and are available in TO-92 and SOT-223 packages. The series offers over 1000V/800V VDRM/VRRM ratings and low level triggering and holding characteristics.
Product Attributes
Brand: DOESHARE
Series: DT1T Series TRIACs
Type: Silicon Bidirectional Thyristors (TRIACs)
Gate Sensitivity: Sensitive gate for third quadrant
Commutation Performance: High commutation performance without snubber circuit
Die: Passivated die for reliability and uniformity
Environmental Compliance: "Green" molding compound, UL flammability classification 94V-0, Lead free in RoHS II 2015/863/EU compliant
Moisture Sensitivity: Meets industry standard IPC/JEDEC J-STD-020
Available Packages: TO-92, SOT-223
Technical Specifications
Parameter
Symbol
DT1T5X
DT1T10X
Unit
Conditions
Notes
Peak repetitive off-state voltage
VDRM / VRRM
800 / 1000
800 / 1000
V
Tj = -40 to 125C, Full sine wave, 50 to 60 Hz; Gate open
(1)
On-stage RMS current
IT(RMS)
1
1
A
Full sine wave, TC = 60C
Peak non-repetitive surge current
ITSM
9
9
A
One full cycle 60 HZ, Tj = 25C
Circuit fusing consideration
I2T
0.6
0.6
AS
t = 8.3ms
Operating junction temperature range
Tj
-40 to +125
-40 to +125
C
Storage temperature range
TSTG
-40 to +150
-40 to +150
C
Thermal resistance (junction to ambient, DC)
Rth(j-a)
50 (TO-92) / 25 (SOT-223)
50 (TO-92) / 25 (SOT-223)
C/W
Without Heatsink
(1)
Maximum lead temperature for soldering
TL
260
260
C
1/8 form case for 10 seconds
(1)
Threshold Voltage
Vto
--
1.1
V
Tj = 125C
MAX
Dynamic resistors
Rd
--
500
m
Tj = 125C
MAX
Peak repetitive forward or reverse blocking current
IDRM / IRRM
--
5 (Tj=25C) / 0.5 (Tj=125C)
uA / mA
VAK = rated VDRM and VRRM, gate open
Peak forward on-state voltage
VTM
1.56
1.56
V
ITM = 1.4 A @ Tj = 25C
MAX
Gate trigger voltage
VGT
1
1
V
VAK = 12V, RL=100
MAX
Gate trigger current
IGT
5 / 10
5 / 10
mA
VAK = 12V, RL=100
(1,2,3)
Holding current
IH
5 / 10
5 / 10
mA
VAK = 12V, RL=100
(1,3)
Latching current
IL
10 / 20 / 25
10 / 20 / 25
mA
VAK = 12V, RL=100
(1,2,3)
Critical rate of rise of off-stage voltage
dv/dt
200
600
V/us
VAK = 67% rated VDRM , Tj = 125C, gate open
MAX
Critical rate of rise of on-state current (snubberless)
di/dt(s)
15
50
A/us
VDRM=maximum VDRM ,Tj = 125C
MAX
Critical rate of rise of on-state current (with snubber)
di/dt(c)
0.3
1
A/ms
Tj=125C, gate open, Without Snubber
MAX
Note 1: Without Heatsink
Note: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.