Hefei Purple Horn E-Commerce Co., Ltd.
| Holding Current (Ih) | 40mA |
| Current - Gate Trigger(Igt) | 25mA |
| Voltage - On State(Vtm) | 1.6V |
| Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A |
| Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 190A@10ms |
| SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 1.3V |
| Operating Temperature | -40℃~+125℃@(Tj) |
| Description | 40mA 25mA 800V 1 SCR TO-220 TRIACs RoHS |
| Mfr. Part # | 3CT12B |
| Package | TO-220 |
| Model Number | 3CT12B |
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Product Specification
| Holding Current (Ih) | 40mA | Current - Gate Trigger(Igt) | 25mA |
| Voltage - On State(Vtm) | 1.6V | Average Gate Power Dissipation (PG(AV)) | 1W |
| Current - On State(It(RMS)) | 16A | Peak off - state voltage(Vdrm) | 800V |
| Current - Surge(Itsm@f) | 190A@10ms | SCR Type | 1 SCR |
| Gate Trigger Voltage (Vgt) | 1.3V | Operating Temperature | -40℃~+125℃@(Tj) |
| Description | 40mA 25mA 800V 1 SCR TO-220 TRIACs RoHS | Mfr. Part # | 3CT12B |
| Package | TO-220 | Model Number | 3CT12B |
The 3CT12B is a Reverse Blocking Triode Thyristor (SCR) designed for AC switching and phase control applications. It features a glass-passivated mesa chip for high reliability and uniformity, low on-state voltage, and high surge current capability. This RoHS compliant product is suitable for various industrial and electronic control systems requiring efficient power management.
| Model | Parameter | Value | Unit | Notes |
|---|---|---|---|---|
| 3CT12B | IT(RMS) - RMS on-state current (180 Conduction angle) | 16 | A | Tc = 110 |
| 3CT12B | VDRM/VRRM - Peak repetitive off-state voltage / Peak repetitive reverse voltage | 800 | V | |
| 3CT12B | IGT - Gate trigger current | 1-25 | mA | VD=12V, RL=33 |
| 3CT12B | IT(AV) - Average on-state current (180 Conduction angle) | 10 | A | Tc = 110 |
| 3CT12B | ITSM - Non-repetitive surge peak on-state current | 200 | A | Tp=8.3ms, Tc = 25 |
| 3CT12B | ITSM - Non-repetitive surge peak on-state current | 190 | A | Tp=10ms, Tc = 25 |
| 3CT12B | I2t - I2t Value for using | 200 | As | t=10ms, Tc = 25 |
| 3CT12B | dI/dt - Critical rate of rise of on-state current | 50 | A/s | IG=2IGT, tr100ns, F=60Hz, Tc = 125 |
| 3CT12B | IGM - Peak gate current | 5 | A | Tp=20s, Tc = 125 |
| 3CT12B | PG(AV) - Average gate power | 1 | W | Tc = 125 |
| 3CT12B | Tstg - Storage junction temperature range | -40 to +150 | ||
| 3CT12B | Tj - Operation junction temperature range | -40 to +125 | ||
| 3CT12B | VRGM - Maximum peak reverse gate voltage | 5 | V | |
| 3CT12B | VGT - Gate trigger voltage | 1.3 | V | VD=12V, RL=33 |
| 3CT12B | VGD - Non-trigger gate-source voltage | 0.2 | V | VD=VDRM, RL=3.3K, Tj=125 |
| 3CT12B | IH - Holding current | 40 | mA | |
| 3CT12B | IL - Latching current | 60 | mA | |
| 3CT12B | dV/dt - Critical rate of rise of off-state voltage | 1000 | V/s | VDM=67% VDRM, gate open, Tj=125 (MAX) |
| 3CT12B | VTM - Peak on-state voltage | 1.6 | V | ITM=32A, Tp=380s, Tj=25 |
| 3CT12B | VtO - Threshold voltage | 0.77 | V | Tj=125 |
| 3CT12B | Rd - Dynamic resistance | 23 | m | Tj=125 |
| 3CT12B | IDRM - Peak on-state leakage current | 5 | uA | VDRM = VRRM, Tj=25 |
| 3CT12B | IRRM - Peak reverse leakage current | 2 | mA | VDRM = VRRM, Tj=125 |
| 3CT12B | Rth(j-c) - Thermal resistance junction to case (DC) | 1.1 | /W | |
| 3CT12B | Rth(j-a) - Thermal resistance junction to ambient (DC) | 60 | /W |
Package Mechanical Data: TO-220C (Dimensions in mm)
Order Codes:
Marking: 3CT12B
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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