| Non-Repetitive Peak Forward Surge Current | 175A |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - Forward(Vf@If) | 1V@6A |
| Current - Rectified | 6A |
| Voltage - DC Reverse(Vr) | 800V |
| Description | Bridge Rectifier 800V 6A Through Hole GBU |
| Mfr. Part # | GBU6K-E3/51 |
| Package | GBU |
| Model Number | GBU6K-E3/51 |
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 175A | Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - Forward(Vf@If) | 1V@6A | Current - Rectified | 6A |
| Voltage - DC Reverse(Vr) | 800V | Description | Bridge Rectifier 800V 6A Through Hole GBU |
| Mfr. Part # | GBU6K-E3/51 | Package | GBU |
| Model Number | GBU6K-E3/51 |
The Vishay General Semiconductor GBU6A, GBU6B, GBU6D, GBU6G, GBU6J, GBU6K, and GBU6M are single-phase bridge rectifiers designed for general-purpose AC/DC full-wave rectification. These glass-passivated diodes are ideal for printed circuit boards, offering high surge current capability and high case dielectric strength. They are suitable for applications such as monitors, TVs, printers, switching mode power supplies, adapters, audio equipment, and home appliances.
| Parameter | Symbol | GBU6A | GBU6B | GBU6D | GBU6G | GBU6J | GBU6K | GBU6M | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward rectified output current (TC = 90 C) | IF(AV) | 6.0 | A | ||||||
| Maximum average forward rectified output current (TA = 40 C) | IF(AV) | 3.8 | A | ||||||
| Peak forward surge current single sine-wave superimposed on rated load | IFSM | 175 | A | ||||||
| Rating for fusing (t < 8.3 ms) | I2t | 127 | As | ||||||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode (IF = 6.0 A) | VF | 1.0 | V | ||||||
| Maximum DC reverse current per diode (TA = 25 C) | IR | 5.0 | A | ||||||
| Maximum DC reverse current per diode (TA = 125 C) | IR | 500 | A | ||||||
| Typical junction capacitance per diode (VR = 4 V, f = 1 MHz) | CJ | 68 | pF | ||||||
| Typical thermal resistance (Junction to Ambient) | RJA | 20 | C/W | ||||||
| Typical thermal resistance (Junction to Case) | RJC | 2.5 | C/W | ||||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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