Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage VEBO | 5V |
| Input Resistor | 6.11kΩ |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-363 |
| Mfr. Part # | UMD6NTR |
| Package | SOT-363 |
| Model Number | UMD6NTR |
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Product Specification
| Emitter-Base Voltage VEBO | 5V | Input Resistor | 6.11kΩ |
| Number | - | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-363 | Mfr. Part # | UMD6NTR |
| Package | SOT-363 | Model Number | UMD6NTR |
The EMD6 / UMD6N / IMD6A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These transistors are available in SOT-563 (EMD6), SOT-363 (UMD6N), and SOT-457 (IMD6A) packages, offering space-saving benefits and reduced mounting costs. They feature independent transistor elements to prevent interference. The series includes both NPN (DTr1) and PNP (DTr2) configurations, providing versatile solutions for various circuit designs.
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMD6 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | D6 |
| UMD6N | SOT-363 (UMT6) | 2021 | TR | 180 | 8 | 3000 | D6 |
| IMD6A | SOT-457 (SMT6) | 2928 | T108 | 180 | 8 | 3000 | D6 |
| Parameter | Symbol | DTr1 (NPN) Value | DTr2 (PNP) Value | Unit |
|---|---|---|---|---|
| Outline Parameters | ||||
| VCEO | VCEO | 50 | -50 | V |
| IC | IC | 100 | -100 | mA |
| R1 | R1 | 4.7k | 4.7k | |
| Absolute Maximum Ratings (Ta = 25C) | ||||
| Collector-base voltage | VCBO | 50 | -50 | V |
| Collector-emitter voltage | VCEO | 50 | -50 | V |
| Emitter-base voltage | VEBO | 5 | -5 | V |
| Collector current | IC | 100 | -100 | mA |
| Power dissipation (EMD6/UMD6N) | PD*1*2 | 150 / Total | mW | |
| Power dissipation (IMD6A) | PD*1*3 | 300 | mW | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics (Ta = 25C) - DTr1 (NPN) | ||||
| Collector-base breakdown voltage | BVCBO | 50 | - | V |
| Collector-emitter breakdown voltage | BVCEO | 50 | - | V |
| Emitter-base breakdown voltage | BVEBO | 5 | - | V |
| Collector cut-off current | ICBO | - | 500 | nA |
| Emitter cut-off current | IEBO | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | - | 300 | mV |
| DC current gain | hFE | 100 - 600 (Typ. 250) | - | - |
| Input resistance | R1 | 3.29 - 6.11 (Typ. 4.7) | - | k |
| Transition frequency | fT*4 | - | 250 | MHz |
| Electrical Characteristics (Ta = 25C) - DTr2 (PNP) | ||||
| Collector-base breakdown voltage | BVCBO | - | -50 | V |
| Collector-emitter breakdown voltage | BVCEO | - | -50 | V |
| Emitter-base breakdown voltage | BVEBO | - | -5 | V |
| Collector cut-off current | ICBO | - | -500 | nA |
| Emitter cut-off current | IEBO | - | -500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | - | -300 | mV |
| DC current gain | hFE | - | 100 - 600 (Typ. 250) | - |
| Input resistance | R1 | - | 3.29 - 6.11 (Typ. 4.7) | k |
| Transition frequency | fT*4 | - | 250 | MHz |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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