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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Dual digital transistor module ROHM IMH3AT110 suitable for inverter interface
China Dual digital transistor module ROHM IMH3AT110 suitable for inverter interface

  1. China Dual digital transistor module ROHM IMH3AT110 suitable for inverter interface

Dual digital transistor module ROHM IMH3AT110 suitable for inverter interface

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Input Resistor 4.7kΩ
Number -
Collector - Emitter Voltage VCEO 50V
Description 50V SOT-457-6 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # IMH3AT110
Package SOT-457-6
Model Number IMH3AT110

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  1. Product Details
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Product Specification

Input Resistor 4.7kΩ Number -
Collector - Emitter Voltage VCEO 50V Description 50V SOT-457-6 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # IMH3AT110 Package SOT-457-6
Model Number IMH3AT110

Product Overview

The EMH3 / UMH3N / IMH3A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTC143T chips within a single SOT-563, SOT-363, or SOT-457 package, offering significant advantages in terms of reduced mounting cost and board space by effectively halving them. Their independent transistor elements ensure interference-free operation, making them suitable for automated mounting machines.

Product Attributes

  • Brand: ROHM
  • Product Series: EMH3 / UMH3N / IMH3A

Technical Specifications

Model Package Type Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMH3 SOT-563 (EMT6) 1616 T2R 180 8 8000 H3
UMH3N SOT-363 (UMT6) 2021 TN 180 8 3000 H3
IMH3A SOT-457 (SMT6) 2928 T110 180 8 3000 H3
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Power dissipation PD*1*2 150 mW/Total
PD*1*3 300
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> Collector-base breakdown voltage BVCBO IC = 50A 50 - - V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 5mA, IB = 0.25mA - - 300 mV
DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1 - 3.29 4.7 6.11 k
Transition frequency fT*4 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

2207121830_ROHM-IMH3AT110_C4748898.pdf

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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