| Input Resistor | 4.7kΩ |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | 50V SOT-457-6 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | IMH3AT110 |
| Package | SOT-457-6 |
| Model Number | IMH3AT110 |
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Product Specification
| Input Resistor | 4.7kΩ | Number | - |
| Collector - Emitter Voltage VCEO | 50V | Description | 50V SOT-457-6 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | IMH3AT110 | Package | SOT-457-6 |
| Model Number | IMH3AT110 |
The EMH3 / UMH3N / IMH3A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTC143T chips within a single SOT-563, SOT-363, or SOT-457 package, offering significant advantages in terms of reduced mounting cost and board space by effectively halving them. Their independent transistor elements ensure interference-free operation, making them suitable for automated mounting machines.
| Model | Package Type | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMH3 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H3 |
| UMH3N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | H3 |
| IMH3A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | H3 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | Collector-base voltage | VCBO | 50 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current | IC | 100 | mA | ||||
| Power dissipation | PD*1*2 | 150 | mW/Total | ||||
| PD*1*3 | 300 | ||||||
| Junction temperature | Tj | 150 | |||||
| Range of storage temperature | Tstg | -55 | +150 | ||||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V | |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V | |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA | |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA | |
| Collector-emitter saturation voltage | VCE(sat) | IC = 5mA, IB = 0.25mA | - | - | 300 | mV | |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - | |
| Input resistance | R1 | - | 3.29 | 4.7 | 6.11 | k | |
| Transition frequency | fT*4 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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