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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Inverter interface driver dual digital transistor ROHM UMG3NTR with integrated
China Inverter interface driver dual digital transistor ROHM UMG3NTR with integrated

  1. China Inverter interface driver dual digital transistor ROHM UMG3NTR with integrated

Inverter interface driver dual digital transistor ROHM UMG3NTR with integrated

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Emitter-Base Voltage VEBO 5V
Input Resistor 4.7kΩ
Number -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353
Mfr. Part # UMG3NTR
Package SOT-353
Model Number UMG3NTR

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  1. Product Details
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Product Specification

Emitter-Base Voltage VEBO 5V Input Resistor 4.7kΩ
Number - Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353 Mfr. Part # UMG3NTR
Package SOT-353 Model Number UMG3NTR

Product Overview

The EMG3 / UMG3N / FMG3A are common dual digital transistors designed for inverter, interface, and driver applications. These devices offer reduced mounting cost and area by integrating two DTC143T chips into a single package. Available in SOT-553 (EMT5), SOT-353 (UMT5), and SOT-25 (SMT5) packages, they provide a VCEO of 50V and an IC of 100mA.

Product Attributes

  • Brand: ROHM
  • Product Series: EMG3 / UMG3N / FMG3A

Technical Specifications

Parameter Model Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings Common Collector-base voltage 50 V
Collector-emitter voltage 50 V
Emitter-base voltage 5 V
Collector current 100 mA
Power dissipation EMG3 PD*1*2 150 mW
Power dissipation UMG3N PD*1*2 150 mW
Power dissipation FMG3A PD*1*3 300 mW
Junction temperature Common Tj 150
Range of storage temperature Common Tstg -55 +150
Electrical Characteristics Common Collector-base breakdown voltage IC = 50A 50 - - V
Collector-emitter breakdown voltage IC = 1mA 50 - - V
Emitter-base breakdown voltage IE = 50A 5 - - V
Collector cut-off current VCB = 50V - - 500 nA
Emitter cut-off current VEB = 4V - - 500 nA
Collector-emitter saturation voltage IC = 5mA, IB = 0.25mA - - 300 mV
DC current gain VCE = 5V, IC = 1mA 100 250 600 -
Input resistance (R1) 3.29 4.7 6.11 k
Transition frequency Common fT*4 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz
Packaging Specifications EMG3 SOT-553 (EMT5) 1616 T2R 180 8 8000 pcs G3
UMG3N SOT-353 (UMT5) 2021 TR 180 8 3000 pcs G3
FMG3A SOT-25 (SMT5) 2928 T148 180 8 3000 pcs G3

2007151837_ROHM-UMG3NTR_C703684.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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