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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Built in bias resistor PNP digital transistor ROHM DTA144TKAT146 designed for
China Built in bias resistor PNP digital transistor ROHM DTA144TKAT146 designed for

  1. China Built in bias resistor PNP digital transistor ROHM DTA144TKAT146 designed for

Built in bias resistor PNP digital transistor ROHM DTA144TKAT146 designed for

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Emitter-Base Voltage VEBO 5V
Input Resistor 47kΩ
Number -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-59
Mfr. Part # DTA144TKAT146
Package SC-59
Model Number DTA144TKAT146

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Product Specification

Emitter-Base Voltage VEBO 5V Input Resistor 47kΩ
Number - Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-59 Mfr. Part # DTA144TKAT146
Package SC-59 Model Number DTA144TKAT146

Product Overview

DTA144T series are PNP digital transistors with built-in bias resistors, designed for simplified inverter and switching circuit configurations. These transistors eliminate the need for external input resistors, streamlining circuit design. Featuring thin-film resistors with complete isolation, they support negative biasing and minimize parasitic effects. They are ideal for switching, inverter, interface, and driver circuits. Complementary NPN types are available in the DTC144T series. These products are Lead-Free and RoHS Compliant.

Product Attributes

  • Brand: ROHM
  • Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)
  • Certifications: Lead Free/RoHS Compliant

Technical Specifications

Model Package Package Size VCEO IC R1 (Typ.) Power Dissipation (PD*) Marking
DTA144TM VMT3 1212 -50V -100mA 47k 150 mW 96
DTA144TE EMT3 1616 -50V -100mA 47k 150 mW 96
DTA144TUA UMT3 2021 -50V -100mA 47k 200 mW 96
DTA144TKA SMT3 2928 -50V -100mA 47k 200 mW 96
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage BVCBO IC = -50A -50 - - V
Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V
Emitter-base breakdown voltage BVEBO IE = -50A -5 - - V
Collector cut-off current ICBO VCB = -50V - - -0.5 A
Emitter cut-off current IEBO VEB = -4V - - -0.5 A
Collector-emitter saturation voltage VCE(sat) IC / IB = -5mA / -0.5mA - - -0.3 V
DC current gain hFE VCE = -5V, IC = -1mA 100 250 600 -
Input resistance R1 - - 32.9 61.1 k
Transition frequency fT*2 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

*1 Each terminal mounted on a reference footprint

*2 Characteristics of built-in transistor


2412232047_ROHM-DTA144TKAT146_C703610.pdf

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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