| Emitter-Base Voltage VEBO | 5V |
| Input Resistor | 13kΩ |
| Number | 1 NPN (Pre-Biased) |
| Collector - Emitter Voltage VCEO | 60V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA |
| Mfr. Part # | DTDG14GPT100 |
| Package | TO-243AA |
| Model Number | DTDG14GPT100 |
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Product Specification
| Emitter-Base Voltage VEBO | 5V | Input Resistor | 13kΩ |
| Number | 1 NPN (Pre-Biased) | Collector - Emitter Voltage VCEO | 60V |
| Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA | Mfr. Part # | DTDG14GPT100 |
| Package | TO-243AA | Model Number | DTDG14GPT100 |
The DTDG14GP is a digital transistor designed with integrated resistor and zener diode, offering high hFE (300 Min.) and low saturation voltage (400mV max). Its built-in zener diode provides robust protection against reverse surges from inductive loads. This component is suitable for driver applications.
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 6010 | V | |
| Collector current | IC | 1 | A | |
| Resistance | R | (MPT3) | 10k | |
| Collector-base voltage | VCBO | (Ta = 25C) | 6010 | V |
| Collector-emitter voltage | VCEO | (Ta = 25C) | 6010 | V |
| Emitter-base voltage | VEBO | (Ta = 25C) | 5 | V |
| Collector current | IC | (Ta = 25C) | 1 | A |
| Pulsed collector current | ICP*1 | (Ta = 25C) | 2 | A |
| Power dissipation | PD*2 | (Ta = 25C) | 0.5 | W |
| Power dissipation | PD*3 | (Ta = 25C) | 2.0 | W |
| Junction temperature | Tj | (Ta = 25C) | 150 | |
| Range of storage temperature | Tstg | (Ta = 25C) | -55 to +150 | |
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 - 70 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 - 70 | V |
| Emitter-base breakdown voltage | BVEBO | IE = 720A | 5 | V |
| Collector cut-off current | ICBO | VCB = 40V | - 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | 300 - 580 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC = 500mA, IB = 5mA | - 400 | mV |
| DC current gain | hFE | VCE = 2V, IC=500mA | 300 - | |
| Emitter-base resistance | R | 7 - 13 | k | |
| Transition frequency | fT*4 | VCE = 5V, IE = -100mA, f = 30MHz | - 80 - | MHz |
*1 Pw10ms, duty=1/2
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40400.7mm ceramic board.
*4 Characteristics of built-in transistor.
| Part No. | Package | Package size (mm) | Taping code | Reel size (mm) | Tape width (mm) | Basic ordering unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTDG14GP | SOT-89 (MPT3) | 4540 | T100 | 180 | 12 | 1000 | E01 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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