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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor
China Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor

  1. China Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor

Driver application digital transistor ROHM DTDG14GPT100 with integrated resistor

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Emitter-Base Voltage VEBO 5V
Input Resistor 13kΩ
Number 1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO 60V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA
Mfr. Part # DTDG14GPT100
Package TO-243AA
Model Number DTDG14GPT100

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  1. Product Details
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Product Specification

Emitter-Base Voltage VEBO 5V Input Resistor 13kΩ
Number 1 NPN (Pre-Biased) Collector - Emitter Voltage VCEO 60V
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA Mfr. Part # DTDG14GPT100
Package TO-243AA Model Number DTDG14GPT100

Product Overview

The DTDG14GP is a digital transistor designed with integrated resistor and zener diode, offering high hFE (300 Min.) and low saturation voltage (400mV max). Its built-in zener diode provides robust protection against reverse surges from inductive loads. This component is suitable for driver applications.

Product Attributes

  • Brand: ROHM
  • Model: DTDG14GP
  • Package: SOT-89 (MPT3)

Technical Specifications

Parameter Symbol Conditions Value Unit
Collector-emitter voltage VCEO 6010 V
Collector current IC 1 A
Resistance R (MPT3) 10k
Collector-base voltage VCBO (Ta = 25C) 6010 V
Collector-emitter voltage VCEO (Ta = 25C) 6010 V
Emitter-base voltage VEBO (Ta = 25C) 5 V
Collector current IC (Ta = 25C) 1 A
Pulsed collector current ICP*1 (Ta = 25C) 2 A
Power dissipation PD*2 (Ta = 25C) 0.5 W
Power dissipation PD*3 (Ta = 25C) 2.0 W
Junction temperature Tj (Ta = 25C) 150
Range of storage temperature Tstg (Ta = 25C) -55 to +150
Collector-base breakdown voltage BVCBO IC = 50A 50 - 70 V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - 70 V
Emitter-base breakdown voltage BVEBO IE = 720A 5 V
Collector cut-off current ICBO VCB = 40V - 500 nA
Emitter cut-off current IEBO VEB = 4V 300 - 580 A
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA - 400 mV
DC current gain hFE VCE = 2V, IC=500mA 300 -
Emitter-base resistance R 7 - 13 k
Transition frequency fT*4 VCE = 5V, IE = -100mA, f = 30MHz - 80 - MHz

*1 Pw10ms, duty=1/2
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40400.7mm ceramic board.
*4 Characteristics of built-in transistor.

Packaging Specifications

Part No. Package Package size (mm) Taping code Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Marking
DTDG14GP SOT-89 (MPT3) 4540 T100 180 12 1000 E01

2109182030_ROHM-DTDG14GPT100_C509303.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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