Hefei Purple Horn E-Commerce Co., Ltd.
| DC Current Gain | 2700@10mA,5V |
| Emitter-Base Voltage VEBO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 400mA |
| Input Resistor | 2.2kΩ |
| Number | - |
| Pd - Power Dissipation | 150mW |
| Collector - Emitter Voltage VCEO | 20V |
| Description | Pre-Biased Bipolar Transistor (BJT) 20V 400mA 150mW Surface Mount SOT-363 |
| Mfr. Part # | UMH33NTN |
| Package | SOT-363 |
| Model Number | UMH33NTN |
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Product Specification
| DC Current Gain | 2700@10mA,5V | Emitter-Base Voltage VEBO | 40V |
| Operating Temperature | -55℃~+150℃ | Current - Collector(Ic) | 400mA |
| Input Resistor | 2.2kΩ | Number | - |
| Pd - Power Dissipation | 150mW | Collector - Emitter Voltage VCEO | 20V |
| Description | Pre-Biased Bipolar Transistor (BJT) 20V 400mA 150mW Surface Mount SOT-363 | Mfr. Part # | UMH33NTN |
| Package | SOT-363 | Model Number | UMH33NTN |
| Parameter | Symbol | Values | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Collector-base voltage | VCBO | 40 | V | |
| Collector-emitter voltage | VCEO | 20 | V | |
| Emitter-base voltage | VEBO | 40 | V | |
| Collector current | IC | 400 | mA | |
| Power dissipation | PD*1*2 | 150 | mW/Total | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Collector-base breakdown voltage | BVCBO | 40 | V | IC = 50A |
| Collector-emitter breakdown voltage | BVCEO | 20 | V | IC = 1mA |
| Emitter-base breakdown voltage | BVEBO | 40 | V | IE = 50A |
| Collector cut-off current | ICBO | - | 500 nA | VCB = 40V |
| Emitter cut-off current | IEBO | - | 500 nA | VEB = 40V |
| Collector-emitter saturation voltage | VCE(sat) | 30 to 100 | mV | IC = 30mA, IB = 3mA |
| DC current gain | hFE | 820 to 2700 | - | VCE = 5V, IC = 10mA |
| Transition frequency | fT*3 | 35 | MHz | VCE = 6V, IE = -4mA, f = 10MHz |
| Input resistance | R1 | 1.54 to 2.86 | k | |
| Output ON resistance | Ron | 0.6 | Vi = 5V, RL = 1k, f = 1kHz | |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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