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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter
China Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter

  1. China Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter

Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter

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Output Voltage(VO(on)) 100mV
Input Resistor 47kΩ
Resistor Ratio 1
Number -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363
Mfr. Part # UMH2N-TN
Package SOT-363
Model Number UMH2N-TN

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  1. Product Details
  2. Company Details

Product Specification

Output Voltage(VO(on)) 100mV Input Resistor 47kΩ
Resistor Ratio 1 Number -
Collector - Emitter Voltage VCEO 50V Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363
Mfr. Part # UMH2N-TN Package SOT-363
Model Number UMH2N-TN

Product Overview

The EMH2, UMH2N, and IMH2A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices feature two independent transistor elements within a single package, enabling reduced mounting costs and board space. They are compatible with automatic mounting machines and offer interference-free operation. The series provides a supply voltage of up to 50V and a maximum collector current of 100mA.

Product Attributes

  • Brand: ROHM
  • Product Series: EMH2 / UMH2N / IMH2A
  • Type: Dual Digital Transistors

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMH2 SOT-563 (EMT6) 1616 T2R 180 8 8000 H2
UMH2N SOT-363 (UMT6) 2021 TN 180 8 3000 H2
IMH2A SOT-457 (SMT6) 2928 T110 180 8 3000 H2
Parameter Symbol Conditions Values (Min.) Values (Typ.) Values (Max.) Unit
Absolute Maximum Ratings (Ta = 25C) VCC 50 V
VIN -10 40 V
IO 30 mA
IC(MAX)*1 100 mA
Power Dissipation PD*2*3 (EMH2) 150 mW
PD*2*3 (UMH2N) 150 mW
PD*2*4 (IMH2A) 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C) VI(off) VCC = 5V, IO = 100A 0.5 V
VI(on) VO = 0.3V, IO = 2mA 3.0 V
VO(on) IO = 10mA, II = 0.5mA 100 300 mV
II VI = 5V 180 A
IO(off) VCC = 50V, VI = 0V 500 nA
GI VO = 5V, IO = 5mA 68 -
R1 32.9 47 61.1 k
R2/R1 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz 250 MHz

Note:

  • *1: Characteristics of built-in transistor
  • *2: Each terminal mounted on a reference land
  • *3: 120mW per element must not be exceeded.
  • *4: 200mW per element must not be exceeded.

lApplication

  • INVERTER
  • INTERFACE
  • DRIVER

2304140030_ROHM-UMH2N-TN_C122979.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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