| Number | 2 PNP Pre-Biased Transistors |
| Collector - Emitter Voltage VCEO | 50V |
| Description | 2 PNP Pre-Biased Transistors 50V TSSOP-5(SC-70-5)SOT-353 Single, Pre-Biased Bipolar Transistors RoHS |
| Mfr. Part # | UMA1NTR |
| Package | TSSOP-5(SC-70-5)SOT-353 |
| Model Number | UMA1NTR |
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Product Specification
| Number | 2 PNP Pre-Biased Transistors | Collector - Emitter Voltage VCEO | 50V |
| Description | 2 PNP Pre-Biased Transistors 50V TSSOP-5(SC-70-5)SOT-353 Single, Pre-Biased Bipolar Transistors RoHS | Mfr. Part # | UMA1NTR |
| Package | TSSOP-5(SC-70-5)SOT-353 | Model Number | UMA1NTR |
The UMA1N and FMA1A are common-emitter dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two DTA124E chips into a single UMT or SMT package, offering significant advantages in reduced mounting cost and board space. They are ideal for applications requiring efficient digital signal control and amplification.
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| UMA1N | SOT-353 (UMT5) | 2021 | TR | 180 | 8 | 3000 | A1 |
| FMA1A | SOT-25 (SMT5) | 2928 | T148 | 180 | 8 | 3000 | A1 |
| Parameter | Symbol | Values | Unit | |
|---|---|---|---|---|
| Supply voltage | VCC | -50 | V | |
| Input voltage | VIN | -40 to 10 | V | |
| Output current | IO | -30 | mA | |
| Collector current (MAX.) | IC(MAX.) | -100 | mA | |
| Power dissipation | UMA1N | PD*2*3 | 150 | mW/Total |
| FMA1A | PD*2*4 | 300 | mW/Total | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Input voltage (OFF) | VI(off) | VCC = -5V, IO = -100A | - | - | -0.5 | V | |
| Input voltage (ON) | VI(on) | VO = -0.2V, IO = -5mA | -3.0 | - | - | V | |
| Output voltage (ON) | VO(on) | IO = -10mA, II = -0.5mA | - | -100 | -300 | mV | |
| Input current | II | VI = -5V | - | - | -360 | A | |
| Output current (OFF) | IO(off) | VCC = -50V, VI = 0V | - | - | -500 | nA | |
| DC current gain | GI | VO = -5V, IO = -5mA | 56 | - | - | - | |
| Input resistance R1 | R1 | - | 15.4 | 22 | 28.6 | k | |
| Resistance ratio R2/R1 | R2/R1 | - | 0.8 | 1.0 | 1.2 | - | |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz | |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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