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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Dual digital transistor power management component ROHM IMD16AT108 designed for
China Dual digital transistor power management component ROHM IMD16AT108 designed for

  1. China Dual digital transistor power management component ROHM IMD16AT108 designed for

Dual digital transistor power management component ROHM IMD16AT108 designed for

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Emitter-Base Voltage VEBO 5V
Output Voltage(VO(on)) -
Input Resistor 2.86kΩ
Resistor Ratio 12
Number -
Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SC-74
Mfr. Part # IMD16AT108
Package SC-74
Model Number IMD16AT108

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  1. Product Details
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Product Specification

Emitter-Base Voltage VEBO 5V Output Voltage(VO(on)) -
Input Resistor 2.86kΩ Resistor Ratio 12
Number - Collector - Emitter Voltage VCEO 50V
Description Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SC-74 Mfr. Part # IMD16AT108
Package SC-74 Model Number IMD16AT108

Product Overview

The ROHM IMD16A is a power management component featuring dual digital transistors in a SMT package. It is designed to drive up to 500mA and offers low VCE(sat) for reduced power dissipation. This component is suitable for various power management applications.

Product Attributes

  • Brand: ROHM
  • Package Type: SMT6
  • Marking Code: D16
  • Basic Ordering Unit: 3000 pieces

Technical Specifications

IMD16A
Parameter Symbol Value
Features
Two digital class transistors in a SMT package - -
Up to 500mA can be driven IC 500mA (Max)
Low VCE(sat) of drive transistors for low power dissipation VCE(sat) Low
Dimensions (Unit : mm)
Package Dimensions - SMT6 (EIAJ: SC-74)
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC -50 V
Output current IC -12 mA
Input voltage VIN -500 mA
Collector-base voltage (DTr2) VCBO 50 V
Collector-emitter voltage (DTr2) VCEO 50 V
Emitter-base voltage (DTr2) VEBO 5 V
Collector current (DTr2) IC 100 mA
Total Collector power dissipation Pd 300mW (TOTAL)
Junction temperature Tj 150 C
Storage temperature Tstg -55 to +150 C
Electrical Characteristics (Ta=25C)
DTr1 (PNP)
Input voltage (VI(off)) VI(off) -0.3 V (Max)
Input voltage (VI(on)) VI(on) -2 V (Min)
Output voltage (VO(on)) VO(on) -0.3 V (Max)
Input current (II) II -3 A (Max)
Output current (IO(off)) IO(off) -0.5 A (Max)
DC current gain (GI) GI 82 (Min)
Transition frequency (fT) fT 250 MHz (Typ)
Input resistance (R1) R1 2.2 k (Typ)
Resistance ratio (R2 / R1) R2 / R1 1.54 (Min)
DTr2 (NPN)
Collector-base breakdown voltage BVCBO 50 V (Min)
Collector-emitter breakdown voltage BVCEO 50 V (Min)
Emitter-base breakdown voltage BVEBO 5 V (Min)
Collector cutoff current ICBO 0.5 A (Max)
Emitter cutoff current IEBO 0.5 A (Max)
Collector-emitter saturation voltage VCE(sat) 0.3 V (Max)
DC current transfer ratio hFE 100 (Min)
Transition frequency fT 250 MHz (Typ)
Input resistance R1 70 (Min)

2007151837_ROHM-IMD16AT108_C703621.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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