| Emitter-Base Voltage VEBO | 5V |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 12 |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SC-74 |
| Mfr. Part # | IMD16AT108 |
| Package | SC-74 |
| Model Number | IMD16AT108 |
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Product Specification
| Emitter-Base Voltage VEBO | 5V | Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kΩ | Resistor Ratio | 12 |
| Number | - | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SC-74 | Mfr. Part # | IMD16AT108 |
| Package | SC-74 | Model Number | IMD16AT108 |
The ROHM IMD16A is a power management component featuring dual digital transistors in a SMT package. It is designed to drive up to 500mA and offers low VCE(sat) for reduced power dissipation. This component is suitable for various power management applications.
| IMD16A | ||
|---|---|---|
| Parameter | Symbol | Value |
| Features | ||
| Two digital class transistors in a SMT package | - | - |
| Up to 500mA can be driven | IC | 500mA (Max) |
| Low VCE(sat) of drive transistors for low power dissipation | VCE(sat) | Low |
| Dimensions (Unit : mm) | ||
| Package Dimensions | - | SMT6 (EIAJ: SC-74) |
| Absolute Maximum Ratings (Ta=25C) | ||
| Supply voltage | VCC | -50 V |
| Output current | IC | -12 mA |
| Input voltage | VIN | -500 mA |
| Collector-base voltage (DTr2) | VCBO | 50 V |
| Collector-emitter voltage (DTr2) | VCEO | 50 V |
| Emitter-base voltage (DTr2) | VEBO | 5 V |
| Collector current (DTr2) | IC | 100 mA |
| Total Collector power dissipation | Pd | 300mW (TOTAL) |
| Junction temperature | Tj | 150 C |
| Storage temperature | Tstg | -55 to +150 C |
| Electrical Characteristics (Ta=25C) | ||
| DTr1 (PNP) | ||
| Input voltage (VI(off)) | VI(off) | -0.3 V (Max) |
| Input voltage (VI(on)) | VI(on) | -2 V (Min) |
| Output voltage (VO(on)) | VO(on) | -0.3 V (Max) |
| Input current (II) | II | -3 A (Max) |
| Output current (IO(off)) | IO(off) | -0.5 A (Max) |
| DC current gain (GI) | GI | 82 (Min) |
| Transition frequency (fT) | fT | 250 MHz (Typ) |
| Input resistance (R1) | R1 | 2.2 k (Typ) |
| Resistance ratio (R2 / R1) | R2 / R1 | 1.54 (Min) |
| DTr2 (NPN) | ||
| Collector-base breakdown voltage | BVCBO | 50 V (Min) |
| Collector-emitter breakdown voltage | BVCEO | 50 V (Min) |
| Emitter-base breakdown voltage | BVEBO | 5 V (Min) |
| Collector cutoff current | ICBO | 0.5 A (Max) |
| Emitter cutoff current | IEBO | 0.5 A (Max) |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 V (Max) |
| DC current transfer ratio | hFE | 100 (Min) |
| Transition frequency | fT | 250 MHz (Typ) |
| Input resistance | R1 | 70 (Min) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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