| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457 |
| Mfr. Part # | IMD3AT108 |
| Package | SOT-457 |
| Model Number | IMD3AT108 |
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Product Specification
| Output Voltage(VO(on)) | 300mV | Input Resistor | 10kΩ |
| Resistor Ratio | 1 | Number | - |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457 |
| Mfr. Part # | IMD3AT108 | Package | SOT-457 |
| Model Number | IMD3AT108 |
The EMD3/UMD3N/IMD3A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate both NPN (EMD3/UMD3N) and PNP (IMD3A) transistor elements within compact SOT packages (SOT-563, SOT-363, SOT-457), offering a space-saving solution. The independent transistor elements prevent interference, and their integration halves mounting costs and area. They are compatible with automatic mounting machines.
| Model | Package | DTr1 (NPN) VCC | DTr1 (NPN) IC(MAX.) | DTr1 (NPN) R1 | DTr1 (NPN) R2 | DTr2 (PNP) VCC | DTr2 (PNP) IC(MAX.) | DTr2 (PNP) R1 | DTr2 (PNP) R2 | Packaging | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EMD3 | SOT-563 (EMT6) | 50V | 100mA | 10k | 10k | -50V | -100mA | 10k | 10k | SOT-563 | T2R | 180 | 8 | 8000 | D3 |
| UMD3N | SOT-363 (UMT6) | 50V | 100mA | 10k | 10k | -50V | -100mA | 10k | 10k | SOT-363 | TR | 180 | 8 | 3000 | D3 |
| IMD3A | SOT-457 (SMT6) | 50V | 100mA | 10k | 10k | -50V | -100mA | 10k | 10k | SOT-457 | T108 | 180 | 8 | 3000 | D3 |
| Parameter | Symbol | DTr1(NPN) Unit | DTr2(PNP) Unit |
|---|---|---|---|
| Supply voltage | VCC | 50 V | -50 V |
| Input voltage | VIN | -10 to 40 V | -40 to 10 V |
| Output current | IO | 50 mA | -50 mA |
| Collector current | IC(MAX)*1 | 100 mA | -100 mA |
| Power dissipation (EMD3/UMD3N) | PD*2*3 | 150 mW/Total (120mW per element max) | |
| Power dissipation (IMD3A) | PD*2*4 | 300 mW (200mW per element max) | |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 | |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (off) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.5 | V |
| Input voltage (on) | VI(on) | VO = 0.3V, IO = 10mA | 3.0 | - | - | V |
| Output voltage (on) | VO(on) | IO = 10mA, II = 0.5mA | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 880 | A |
| Output current (off) | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 5mA | 30 | - | - | - |
| Input resistance | R1 | - | - | 7 | 13 | k |
| Resistance ratio | R2/R1 | - | 0.8 | 1.0 | 1.2 | - |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (off) | VI(off) | VCC = -5V, IO = -100A | - | - | -0.5 | V |
| Input voltage (on) | VI(on) | VO = -0.3V, IO = -10mA | -3.0 | - | - | V |
| Output voltage (on) | VO(on) | IO = -10mA, II = -0.5mA | - | -100 | -300 | mV |
| Input current | II | VI = -5V | - | - | -880 | A |
| Output current (off) | IO(off) | VCC = -50V, VI = 0V | - | - | -500 | nA |
| DC current gain | GI | VO = -5V, IO = -5mA | 30 | - | - | - |
| Input resistance | R1 | - | - | 7 | 13 | k |
| Resistance ratio | R2/R1 | - | 0.8 | 1.0 | 1.2 | - |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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