| Output Voltage(VO(on)) | 100mV |
| Input Resistor | 13kΩ |
| Resistor Ratio | 5.7 |
| Number | 2 NPN (Pre-Biased) |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-363 |
| Mfr. Part # | UMH9NFHATN |
| Package | SOT-363 |
| Model Number | UMH9NFHATN |
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Product Specification
| Output Voltage(VO(on)) | 100mV | Input Resistor | 13kΩ |
| Resistor Ratio | 5.7 | Number | 2 NPN (Pre-Biased) |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-363 |
| Mfr. Part # | UMH9NFHATN | Package | SOT-363 |
| Model Number | UMH9NFHATN |
The UMH9N FHA is a general-purpose dual digital transistor housed in a SOT-363 (UMT6) package, offering AEC-Q101 qualification. It features two independent DTC114Y transistor elements within a single package, enabling mounting with UMT3 automatic machines and reducing interference. This design contributes to halved mounting costs and area. The UMH9N FHA is suitable for applications including inverters, interfaces, and drivers.
| Parameter | Symbol | Conditions | Values | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Supply voltage | VCC | 50 | V | |
| Input voltage | VIN | -6 to 40 | V | |
| Output current | IO | 70 | mA | |
| Collector current (MAX) | IC(MAX)*1 | 100 | mA | |
| Power dissipation | PD*2*3 | 150 | mW/TOTAL | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||
| Input voltage (VI(off)) | VCC = 5V, IO = 100A | - to 0.3 | V | |
| Input voltage (VI(on)) | VO = 0.3V, IO = 1mA | 1.4 to - | V | |
| Output voltage (VO(on)) | IO = 5mA, II = 0.25mA | - to 100 | mV | |
| Input current | II | VI = 5V | - to 880 | A |
| Output current (IO(off)) | VCC = 50V, VI = 0V | - to 500 | n A | |
| DC current gain | GI | VO = 5V, IO = 5mA | 68 to - | - |
| Input resistance | R1 | 7 to 13 | k | |
| Resistance ratio | R2/R1 | 3.7 to 5.7 | - | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - to 250 | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
Packaging Specifications:
| Part No. | Package | Package size | Taping code | Reel size (mm) | Tape width (mm) | Basic ordering unit.(pcs) | Marking |
|---|---|---|---|---|---|---|---|
| UMH9N FHA | SOT-363 (UMT6) | 2021 TN | 180 | 8 | 3000 | H9 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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