Hefei Purple Horn E-Commerce Co., Ltd.
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA |
| Input Resistor | 13kΩ |
| Resistor Ratio | 1.2 |
| Number | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457 |
| Mfr. Part # | IMH11AT110 |
| Package | SOT-457 |
| Model Number | IMH11AT110 |
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Product Specification
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA | Input Resistor | 13kΩ |
| Resistor Ratio | 1.2 | Number | - |
| Collector - Emitter Voltage VCEO | 50V | Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457 |
| Mfr. Part # | IMH11AT110 | Package | SOT-457 |
| Model Number | IMH11AT110 |
The EMH11/UMH11N/IMH11A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two independent DTC114E chips within a single SOT-563 (EMT6), SOT-363 (UMT6), or SOT-457 (SMT6) package, offering benefits such as reduced mounting cost and area by half, and eliminating interference between transistor elements. They are compatible with automatic mounting machines.
| Part No. | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMH11 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H11 |
| UMH11N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | H11 |
| IMH11A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | H11 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | 50 | V | |||
| Input voltage | VIN | -10 | 40 | V | ||
| Output current | IO | 50 | mA | |||
| Collector current | IC(MAX)*1 | 100 | mA | |||
| Power dissipation (EMH11) | PD*2*3 | 150 | mW | |||
| Power dissipation (UMH11N) | PD*2*3 | 150 | mW | |||
| Power dissipation (IMH11A) | PD*2*4 | 300 | mW | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage (OFF) | VI(off) | VCC = 5V, IO = 100A | 0.5 | V | ||
| Input voltage (ON) | VI(on) | VO = 0.3V, IO = 10mA | 3.0 | V | ||
| Output voltage (ON) | VO(on) | IO = 10mA, II = 0.5mA | 100 | 300 | mV | |
| Input current | II | VI = 5V | 880 | A | ||
| Output current (OFF) | IO(off) | VCC = 50V, VI = 0V | 500 | nA | ||
| DC current gain | GI | VO = 5V, IO = 5mA | 30 | - | - | |
| Input resistance | R1 | 7 | 10 | 13 | k | |
| Resistance ratio | R2/R1 | 0.8 | 1.0 | 1.2 | - | |
| Transition frequency | fT | VCE = 10V, IE = -5mA, f = 100MHz | 250 | - | MHz | |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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