| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Resistor Ratio | - |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 246mW Surface Mount SOT-23 |
| Mfr. Part # | LMUN2212LT1G |
| Package | SOT-23 |
| Model Number | LMUN2212LT1G |
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Product Specification
| Output Voltage(VO(on)) | - | Input Resistor | 22kΩ |
| Resistor Ratio | - | Collector - Emitter Voltage VCEO | 50V |
| Description | Pre-Biased Bipolar Transistor (BJT) 50V 100mA 246mW Surface Mount SOT-23 | Mfr. Part # | LMUN2212LT1G |
| Package | SOT-23 | Model Number | LMUN2212LT1G |
The LMUN2212LT1G is a NPN Silicon Surface Mount Transistor featuring a monolithic bias resistor network. It is designed to simplify circuit design, reduce board space, and decrease component count. This device is compliant with RoHS requirements and Halogen Free. It is suitable for applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability for automotive and other demanding applications.
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25) | ||||||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Collector Current | IC | 100 | mA | |||
| Total Power Dissipation @ Ta = 25C | PD | 1.5 | mW | (Note 1) | ||
| Derate above 25C | C/W | |||||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | 508 | C/W | (Note 1) | ||
| Operating and Storage Temperature Range | Topr, Tstg | 55 | +150 | C | ||
| Maximum Temperature for Soldering Purposes, Time in Solder Bath | TL | 260 | C | 10 Sec | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25) | ||||||
| OFF CHARACTERISTICS | ||||||
| Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 50 V, IE = 0 | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nA | VCE = 50 V, IB = 0 | ||
| Emitter-Base Cutoff Current | IEBO | 0.2 | mA | VEB = 6.0 V, IC = 0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | IC = 10 A, IE = 0 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC = 2.0 mA, IB = 0 | ||
| ON CHARACTERISTICS (Note 2.) | ||||||
| DC Current Gain | hFE | 60 | 100 | VCE = 10 V, IC = 5.0 mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.3 mA | ||
| Output Voltage (on) | VOL | 0.2 | V | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | ||
| Output Voltage (off) | VOH | 4.9 | V | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k | ||
| Input Resistor | R1 | 15.4 | 22 | 28.6 | k | |
| Resistor Ratio | R1/R2 | 0.8 | 1 | 1.2 | ||
| Device Marking and Ordering Information | ||||||
| LMUN2212LT1G | A8B | 3000/Tape&Reel | ||||
| S-LMUN2212LT1G | A8B | 10000/Tape&Reel | ||||
Notes:
Package: SOT23 (TO236AB)
Pinout:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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